38N65M5

STB38N65M5, STP38N65M5, STW38N65M5 N-channel 650 V, 0.073 Ω typ., 30 A MDmesh™ V Power MOSFETs 2 in D PAK, TO-220 and TO-247 packages Datasheet - production data Features TAB 2 3 1 D2PAK TAB 3 2 1 TO-220 3 2 1 TO-247 Figure 1. Internal schematic diagram Order codes VDS @ TJmax RDS(on) max ID STB38N65M5 STP38N65M5 STW38N65M5 710 V 0.095 Ω 30 A Higher VDSS rating and high dv/dt capability Excellent switching performance 100% avalanche tested Applications Switching applications 'Ć7$% Description *6 $0Y These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low onresistance, which is unmatched among siliconbased Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency. Or...