Power MOSFET. 38N65M5 Datasheet

38N65M5 MOSFET. Datasheet pdf. Equivalent

38N65M5 Datasheet
Recommendation 38N65M5 Datasheet
Part 38N65M5
Description N-CHANNEL Power MOSFET
Feature 38N65M5; STB38N65M5, STP38N65M5, STW38N65M5 N-channel 650 V, 0.073 Ω typ., 30 A MDmesh™ V Power MOSFETs 2 in .
Manufacture STMicroelectronics
Datasheet
Download 38N65M5 Datasheet




STMicroelectronics 38N65M5
STB38N65M5, STP38N65M5,
STW38N65M5
N-channel 650 V, 0.073 typ., 30 A MDmesh™ V Power MOSFETs
2
in D PAK, TO-220 and TO-247 packages
Datasheet - production data
Features
TAB
2
3
1
D2PAK
TAB
3
2
1
TO-220
3
2
1
TO-247
Figure 1. Internal schematic diagram
Order codes
VDS @
TJmax
RDS(on)
max
ID
STB38N65M5
STP38N65M5
STW38N65M5
710 V 0.095 Ω 30 A
Higher VDSS rating and high dv/dt capability
Excellent switching performance
100% avalanche tested
Applications
Switching applications
' Ć7$%
Description
* 
6 
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These devices are N-channel MDmesh™ V
Power MOSFETs based on an innovative
proprietary vertical process technology, which is
combined with STMicroelectronics’ well-known
PowerMESH™ horizontal layout structure. The
resulting product has extremely low on-
resistance, which is unmatched among silicon-
based Power MOSFETs, making it especially
suitable for applications which require superior
power density and outstanding efficiency.
Order codes
STB38N65M5
STP38N65M5
STW38N65M5
Table 1. Device summary
Marking
Package
2
D PAK
38N65M5
TO-220
TO-247
Packaging
Tape and reel
Tube
April 2014
This is information on a product in full production.
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STMicroelectronics 38N65M5
Contents
Contents
STB38N65M5, STP38N65M5, STW38N65M5
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves)
......................... 6
3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
4.1 D2PAK, STB38N65M5 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11
4.2 TO-220, STP38N65M5 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
4.3 TO-247, STW38N65M5 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
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STMicroelectronics 38N65M5
STB38N65M5, STP38N65M5, STW38N65M5
1 Electrical ratings
Electrical ratings
Symbol
Table 2. Absolute maximum ratings
Parameter
Value
VGS
ID
ID
(1)
IDM
PTOT
(2)
dv/dt
(3)
dv/dt
Gate-source voltage
Drain current (continuous) at TC = 25 °C
Drain current (continuous) at TC = 100 °C
Drain current (pulsed)
Total dissipation at TC = 25 °C
Peak diode recovery voltage slope
MOSFET dv/dt ruggedness
Tstg Storage temperature
Tj Max. operating junction temperature
1. Pulse width limited by safe operating area.
2. ISD 30 A, di/dt 400 A/μs; VPeak < V(BR)DSS, VDD = 400 V
3. VDS 520 V
± 25
30
19
120
190
15
50
- 55 to 150
150
Unit
V
A
A
A
W
V/ns
V/ns
°C
°C
Table 3. Thermal data
Symbol
Parameter
Rthj-case Thermal resistance junction-case max
(1)
Rthj-pcb Thermal resistance junction-pcb max
Rthj-amb Thermal resistance junction-ambient max
1. 1.When mounted on 1inch² FR-4 board, 2 oz Cu.
D2PAK
30
Value
TO-220
0.66
62.5
Unit
TO-247
°C/W
°C/W
50 °C/W
Symbol
Table 4. Avalanche characteristics
Parameter
Value
Avalanche current, repetitive or not repetitive
IAR (pulse width limited by Tjmax)
Single pulse avalanche energy
EAS (starting tj = 25°C, Id= IAR; Vdd= 50V)
8
660
Unit
A
mJ
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