IGBT. SGL50N60RUF Datasheet

SGL50N60RUF IGBT. Datasheet pdf. Equivalent

SGL50N60RUF Datasheet
Recommendation SGL50N60RUF Datasheet
Part SGL50N60RUF
Description IGBT
Feature SGL50N60RUF; SGL50N60RUF SGL50N60RUF Short Circuit Rated IGBT IGBT General Description Fairchild's RUF series .
Manufacture Fairchild Semiconductor
Datasheet
Download SGL50N60RUF Datasheet




Fairchild Semiconductor SGL50N60RUF
SGL50N60RUF
Short Circuit Rated IGBT
IGBT
General Description
Fairchild's RUF series of Insulated Gate Bipolar Transistors
(IGBTs) provide low conduction and switching losses as
well as short circuit ruggedness. The RUF series is
designed for applications such as motor control,
uninterrupted power supplies (UPS) and general inverters
where short circuit ruggedness is a required feature.
Features
• Short circuit rated 10us @ TC = 100°C, VGE = 15V
• High speed switching
• Low saturation voltage : VCE(sat) = 2.2 V @ IC = 50A
• High input impedance
Applications
AC & DC motor controls, general purpose inverters, robotics, and servo controls.
C
G
GC E
TO-264
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VCES
VGES
IC
ICM (1)
TSC
PD
TJ
Tstg
TL
Description
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
@ TC = 25°C
@ TC = 100°C
Short Circuit Withstand Time
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
@ TC = 100°C
@ TC = 25°C
@ TC = 100°C
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes,1/8” from Case for 5 Seconds
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
RθJC
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
E
SGL50N60RUF
600
± 20
80
50
150
10
250
100
-55 to +150
-55 to +150
300
Typ.
--
--
Max.
0.5
25
Units
V
V
A
A
A
us
W
W
°C
°C
°C
Units
°C/W
°C/W
©2002 Fairchild Semiconductor Corporation
SGL50N60RUF Rev. A1



Fairchild Semiconductor SGL50N60RUF
Electrical Characteristics of the IGBT TC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
Off Characteristics
BVCES
BVCES/
TJ
ICES
IGES
Collector-Emitter Breakdown Voltage
Temperature Coefficient of Breakdown
Voltage
Collector Cut-Off Current
G-E Leakage Current
VGE = 0V, IC = 250uA
VGE = 0V, IC = 1mA
VCE = VCES, VGE = 0V
VGE = VGES, VCE = 0V
On Characteristics
VGE(th)
VCE(sat)
G-E Threshold Voltage
Collector to Emitter
Saturation Voltage
Ic = 50mA, VCE = VGE
IC = 50A, VGE = 15V
IC = 80A, VGE = 15V
Dynamic Characteristics
Cies
Coes
Cres
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VCE=30V, VGE = 0V,
f = 1MHz
Switching Characteristics
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Tsc Short Circuit Withstand Time
Qg Total Gate Charge
Qge Gate-Emitter Charge
Qgc Gate-Collector Charge
Le Internal Emitter Inductance
VCC = 300 V, IC = 50A,
RG = 5.9, VGE = 15V,
Inductive Load, TC = 25°C
VCC = 300 V, IC = 50A,
RG = 5.9, VGE = 15V,
Inductive Load, TC = 125°C
VCC = 300 V, VGE = 15V,
@ TC = 100°C
VCE = 300 V, IC = 50A,
VGE = 15V
Measured 5mm from PKG
600 -- -- V
-- 0.6 -- V/°C
-- -- 250 uA
-- -- ± 100 nA
5.0 6.0 8.5
-- 2.2 2.8
-- 2.5 --
V
V
V
-- 3311 --
-- 399 --
-- 139 --
pF
pF
pF
-- 26 -- ns
-- 89 -- ns
--
66 100
ns
-- 118 200 ns
-- 1.68 --
mJ
-- 1.03 --
mJ
-- 2.71 3.8 mJ
-- 28 -- ns
-- 91 -- ns
--
68 110
ns
-- 261 400 ns
-- 1.7 -- mJ
-- 2.31 --
mJ
-- 4.01 5.62 mJ
10 -- -- us
-- 145 210 nC
-- 25 35 nC
-- 70 100 nC
-- 18 -- nH
©2002 Fairchild Semiconductor Corporation
SGL50N60RUF Rev. A1



Fairchild Semiconductor SGL50N60RUF
140 Common Emitter
TC = 25
120
20V 15V
100
12V
80
60 V = 10V
GE
40
20
0
02468
Collector - Emitter Voltage, VCE [V]
Fig 1. Typical Output Characteristics
5
Common Emitter
V = 15V
GE
4
3
2
1
100A
50A
I = 30A
C
0
-50
0 50 100
Case Temperature, TC []
150
Fig 3. Saturation Voltage vs. Case
Temperature at Variant Current Level
20
Common Emitter
TC = 25
16
12
8
100A
4 50A
IC = 30A
0
0 4 8 12 16
Gate - Emitter Voltage, VGE [V]
Fig 5. Saturation Voltage vs. VGE
©2002 Fairchild Semiconductor Corporation
20
140
Common Emitter
120 VGE = 15V
T = 25℃ ━━
C
T = 125------
100 C
80
60
40
20
0
1
10
Collector - Emitter Voltage, VCE [V]
Fig 2. Typical Saturation Voltage Characteristics
60
V = 300V
CC
Load Current : peak of square wave
50
40
30
20
10 Duty cycle : 50%
T = 100
C
Power Dissipation = 70W
0
1 10
100
Frequency [KHz]
1000
Fig 4. Load Current vs. Frequency
20
Common Emitter
TC = 125
16
12
8
100A
4 50A
IC = 30A
0
0 4 8 12 16
Gate - Emitter Voltage, VGE [V]
Fig 6. Saturation Voltage vs. VGE
20
SGL50N60RUF Rev. A1







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