IGBT. SIGC42T60UN Datasheet

SIGC42T60UN IGBT. Datasheet pdf. Equivalent

SIGC42T60UN Datasheet
Recommendation SIGC42T60UN Datasheet
Part SIGC42T60UN
Description IGBT
Feature SIGC42T60UN; SIGC42T60UN High Speed IGBT Chip in NPT-technology FEATURES: • low Eoff • 600V NPT technology • 10.
Manufacture Infineon
Datasheet
Download SIGC42T60UN Datasheet




Infineon SIGC42T60UN
SIGC42T60UN
High Speed IGBT Chip in NPT-technology
FEATURES:
low Eoff
600V NPT technology
100µm chip
short circuit prove
positive temperature coefficient
easy paralleling
This chip is used for:
SGW50N60HS
Applications:
Welding
PFC
UPS
C
G
E
Chip Type
SIGC42T60UN
VCE
ICn
Die Size
600V 50A
6.5 x 6.5 mm2
Package Ordering Code
sawn on foil SP0001-01820
MECHANICAL PARAMETER:
Raster size
Area total / active
Emitter pad size
Gate pad size
Thickness
Wafer size
Flat position
Max.possible chips per wafer
Passivation frontside
Emitter metallization
Collector metallization
Die bond
Wire bond
Reject Ink Dot Size
Recommended Storage Environment
6.5 x 6.5
mm2
42.25 / 35.6
2x( 3.0x2.85 )
0.8 x 1.5
100 µm
150 mm
90 deg
334
Photoimide
3200 nm Al Si 1%
1400 nm Ni Ag –system
suitable for epoxy and soft solder die bonding
electrically conductive glue or solder
Al, 500µm
0.65mm ; max 1.2mm
store in original container, in dry nitrogen,
< 6 month at an ambient temperature of 23°C
Edited by INFINEON Technologies AIM PMD D CID CLS, L 7272U, Edition 1, 13. 09.2005



Infineon SIGC42T60UN
SIGC42T60UN
MAXIMUM RATINGS:
Parameter
Symbol
Value
Unit
Collector-emitter voltage, Tj=25 °C
VCE
600 V
DC collector current, limited by Tjmax
IC 1) A
Pulsed collector current, tp limited by Tjmax
Icpuls
150 A
Gate emitter voltage
VGE
±20 V
Operating junction and storage temperature
1 ) depending on thermal properties of assembly
Tj, Tstg
-55 ... +150
°C
STATIC CHARACTERISTICS (tested on chip), Tj=25 °C, unless otherwise specified:
Paramete r
Symbol
Conditions
Value
Unit
min. typ. max.
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Gate-emitter threshold voltage
Zero gate voltage collector current
V(BR)CES
VGE=0V, IC=2mA
600
VCE(sat)
VGE=15V, IC=50A
2.8 3.15 V
VGE(th)
IC=1mA, VGE=VCE 3 4 5
ICES
VCE=600V, VGE=0V
40 µA
Gate-emitter leakage current
IGES
VCE=0V, VGE=20V
120 nA
DYNAMIC CHARACTERISTICS (tested at component):
Parameter
Symbol
Conditions
Input capacitance
Output capacitance
Reverse transfer capacitance
Ci s s
Co s s
Cr s s
V C E= 2 5 V
VGE=0V
f=1MHz
min.
-
-
-
Value
typ. max.
2572
245
158
Unit
pF
SWITCHING CHARACTERISTICS (tested at component), Inductive Load:
Parameter
Symbol
Conditions*
Turn-on delay time
Rise time
Turn-off delay time
Fall time
td(on)
tr
td(off)
tf
Tj=150°C
VCC=400V
IC=50A
VGE=+15/0V
RG= 6 . 8
* Values also influenced by parasitic L- and C- in measurement and package.
min.
-
Value
typ. max.
48
Unit
ns
- 31
- 350
- 20
Edited by INFINEON Technologies AIM PMD D CID CLS, L 7272U, Edition 1, 13. 09.2005



Infineon SIGC42T60UN
CHIP DRAWING:
SIGC42T60UN
Edited by INFINEON Technologies AIM PMD D CID CLS, L 7272U, Edition 1, 13. 09.2005





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