Planar Transistor. BTD965LA3 Datasheet

BTD965LA3 Transistor. Datasheet pdf. Equivalent

BTD965LA3 Datasheet
Recommendation BTD965LA3 Datasheet
Part BTD965LA3
Description NPN Planar Transistor
Feature BTD965LA3; CYStech Electronics Corp. Low VCE(sat) NPN Planar Transistor BTD965LA3 Spec. No. : C852A3 Issued Da.
Manufacture Cystech Electonics
Datasheet
Download BTD965LA3 Datasheet





Cystech Electonics BTD965LA3
CYStech Electronics Corp.
Low VCE(sat) NPN Planar Transistor
BTD965LA3
Spec. No. : C852A3
Issued Date : 2004.07.02
Revised Date : 2007.04.18
Page No. : 1/5
Features
High current capability
Low collector-to-emitter saturation voltage
High allowable power dissipation
Pb-free package
Applications
Relay drivers, lamp drivers, motor drivers, strobes
Symbol
BTD965LA3
Outline
TO-92
B : Base
C : Collector
E : Emitter
ECB
Absolute Maximum Ratings (Ta=25°C)
Parameter
Symbol
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Collector Power Dissipation (Note)
Junction Temperature
VCBO
VCEO
VEBO
IC
ICP
PD
Tj
Storage Temperature
Tstg
Limits
20
15
7
5
9
750
150
-55~+150
Unit
V
V
V
A
A
mW
°C
°C
Note : when a device is mounted on a glass epoxy board, measuring 35mm×30mm×1mm.
BTD965LA3
CYStek Product Specification



Cystech Electonics BTD965LA3
CYStech Electronics Corp.
Spec. No. : C852A3
Issued Date : 2004.07.02
Revised Date : 2007.04.18
Page No. : 2/5
Characteristics (Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)1
*VCE(sat)2
*VBE(sat)
*hFE1
*hFE2
*hFE3
fT
Cob
Min.
20
15
7
-
-
-
-
-
400
390
185
-
-
Typ.
-
-
-
-
-
-
230
0.95
-
-
-
170
25
Max.
-
-
-
100
100
180
350
1.2
-
820
-
-
-
Unit
V
V
V
nA
nA
mV
mV
V
-
-
-
MHz
pF
Test Conditions
IC=100μA, IE=0
IC=1mA, IB=0
IE=10μA, IC=0
VCB=15V, IE=0
VEB=5V, IC=0
IC=1.5A, IB=30mA
IC=3A, IB=60mA
IC=1.5A, IB=30mA
VCE=2V, IC=500mA
VCE=2V, IC=2A
VCE=2V, IC=5A
VCE=6V, IC=50mA, f=100MHz
VCB=10V, f=1MHz
*Pulse Test: Pulse Width 380μs, Duty Cycle2%
BTD965LA3
CYStek Product Specification



Cystech Electonics BTD965LA3
CYStech Electronics Corp.
Characteristic Curves
Spec. No. : C852A3
Issued Date : 2004.07.02
Revised Date : 2007.04.18
Page No. : 3/5
0.3
0.25
0.2
0.15
0.1
0.05
0
0
Output Characteristics
IB=500uA
IB=400uA
IB=300uA
IB=200uA
IB=100uA
IB=0
12 34 5
Collector-to-Emitter Voltage---VCE(V)
6
1.4
1.2
1
0.8
0.6
0.4
0.2
0
0
Output Characteristics
IB=2.5mA
IB=2mA
IB=1.5mA
IB=1mA
IB=500uA
IB=0
12 345
Collector-to-Emitter Voltage---VCE(V)
6
4.5
4
3.5
3
2.5
2
1.5
1
0.5
0
0
Output Characteristics
IB=10mA
IB=8mA
IB=6mA
IB=4mA
IB=2mA
IB=0
12345
Collector-to-Emitter Voltage---VCE(V)
6
Output Characteristics
8
7 IB=25mA
IB=20mA
6 IB=15mA
5 IB=10mA
4
3 IB=5mA
2
1
IB=0
0
0 12 34 56
Collector-to-Emitter Voltage---VCE(V)
Current Gain vs Collector Current
1000
VCE=5V
100
1
VCE=2V
VCE=1V
10 100 1000
Collector Current---IC(mA)
10000
Saturation Voltage vs Collector Current
1000
VCE(SAT)
100
IC=50IB
10
1
1
IC=30IB
IC=10IB
10 100 1000
Collector Current---IC(mA)
10000
BTD965LA3
CYStek Product Specification





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