Planar Transistor. BTD9065D3 Datasheet

BTD9065D3 Transistor. Datasheet pdf. Equivalent

BTD9065D3 Datasheet
Recommendation BTD9065D3 Datasheet
Part BTD9065D3
Description NPN Planar Transistor
Feature BTD9065D3; CYStech Electronics Corp. Low Vcesat NPN Epitaxial Planar Transistor BTD9065D3 BVCEO IC RCESAT Sp.
Manufacture Cystech Electonics
Datasheet
Download BTD9065D3 Datasheet





Cystech Electonics BTD9065D3
CYStech Electronics Corp.
Low Vcesat NPN Epitaxial Planar Transistor
BTD9065D3
BVCEO
IC
RCESAT
Spec. No. : C847D3
Issued Date : 2011.03.25
Revised Date :
Page No. : 1/5
20V
5A
160mΩ(typ.)
Features
Low VCE(sat), VCE(sat)=0.65 V (typical), at IC / IB = 4A / 0.1A
Excellent current gain characteristics
Pb-free lead plating package
Symbol
BTD9065D3
Outline
TO-126ML
BBase
CCollector
EEmitter
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current(DC)
Collector Current(Pulse)
Power Dissipation(TA=25)
Power Dissipation(TC=25)
Junction Temperature
Storage Temperature
Note : *1. Single Pulse , Pw380μs,Duty2%.
Symbol
VCBO
VCES
VCEO
VEBO
IC
ICP
PD
Tj
Tstg
BTD9065D3
ECB
Limits
50
40
20
8
5
10
1.5
10
150
-55~+150
*1
Unit
V
V
V
V
A
W
°C
°C
CYStek Product Specification



Cystech Electonics BTD9065D3
CYStech Electronics Corp.
Spec. No. : C847D3
Issued Date : 2011.03.25
Revised Date :
Page No. : 2/5
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max
Symbol
Rth,j-c
Rth,j-a
Value
12.5
83.3
Unit
°C/W
°C/W
Characteristics (Ta=25°C)
Symbol
BVCBO
BVCES
BVCEO
BVEBO
ICBO
ICES
IEBO
*VCE(sat)
*RCE(sat)
*VBE(on)
*hFE
*hFE
fT
Cob
Min.
50
40
20
8
-
-
-
-
-
-
300
80
-
-
Typ.
-
-
-
-
-
-
-
0.65
160
-
-
-
150
35
Max.
-
-
-
-
100
100
100
1
250
1.5
600
-
-
-
Unit
V
V
V
V
nA
nA
nA
V
mΩ
V
-
-
MHz
pF
Test Conditions
IC=50μA, IE=0
IC=50μA, VBE=0
IC=1mA, IB=0
IE=50μA, IC=0
VCB=50V, IE=0
VCE=40V, IE=0
VEB=8V, IC=0
IC=4A, IB=0.1A
IC=4A, IB=0.1A
VCE=2V, IC=4A
VCE=2V, IC=0.5A
VCE=2V, IC=4A
VCE=6V, IC=50mA, f=100MHz
VCB=20V, f=1MHz
*Pulse Test : Pulse Width 380μs, Duty Cycle2%
Ordering Information
Device
BTD9065D3
Package
TO-126ML
(Pb-free lead plating package)
Shipping
200 pcs / bag, 15 bags/box, 10 boxes/carton
BTD9065D3
CYStek Product Specification



Cystech Electonics BTD9065D3
CYStech Electronics Corp.
Spec. No. : C847D3
Issued Date : 2011.03.25
Revised Date :
Page No. : 3/5
Characteristic Curves
Current Gain vs Collector Current
1000
HFE@VCE=2V
Saturation Voltage vs Collector Current
1000
VCESAT@IC=20IB
100
10
100
1
10 100 1000
Collector Current---IC(mA)
10000
Saturation Voltage vs Collector Current
1000
VCE(SAT)@IB=40IB
100
10
1
1 10 100 1000 10000
Collector Current---IC(mA)
1
0.1 1 10 100 1000 10000
Collector Current---IC(mA)
10000
Saturation Voltage vs Collector Current
VBE(SAT)@IC=20IB
1000
100
1
10 100 1000
Collector Current---IC(mA)
10000
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
0
0
Power Derating Curve
50 100 150
Ambient Temperature---TA(℃)
200
12
10
8
6
4
2
0
0
Power Derating Curve
50 100 150
Case Temperature---TC(℃)
200
BTD9065D3
CYStek Product Specification





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