Planar Transistor. BTD965A3 Datasheet

BTD965A3 Transistor. Datasheet pdf. Equivalent

BTD965A3 Datasheet
Recommendation BTD965A3 Datasheet
Part BTD965A3
Description NPN Planar Transistor
Feature BTD965A3; CYStech Electronics Corp. Spec. No. : C847A3 Issued Date : 2003.04.01 Revised Date :2011.02.14 Page.
Manufacture Cystech Electonics
Datasheet
Download BTD965A3 Datasheet





Cystech Electonics BTD965A3
CYStech Electronics Corp.
Spec. No. : C847A3
Issued Date : 2003.04.01
Revised Date :2011.02.14
Page No. : 1/6
Low Vcesat NPN Epitaxial Planar Transistor
BTD965A3
BVCEO
IC
RCESAT(typ)
20V
5A
0.12Ω
Features
Low VCE(sat), VCE(sat)=0.35 V (typical), at IC / IB = 3A / 0.1A
Excellent DC current gain characteristics
Complementary to BTB1386A3
Pb-free package
Symbol
BTD965A3
Outline
TO-92
BBase
CCollector
EEmitter
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Power Dissipation
Junction Temperature
Storage Temperature
Note : *1. Single Pulse Pw300us,Duty2%.
Symbol
VCBO
VCEO
VEBO
IC
ICP
Pd
Tj
Tstg
BTD965A3
ECB
Limits
60
20
7
5
8 *1
0.75
150
-65~+150
Unit
V
V
V
A
W
°C
°C
CYStek Product Specification



Cystech Electonics BTD965A3
CYStech Electronics Corp.
Spec. No. : C847A3
Issued Date : 2003.04.01
Revised Date :2011.02.14
Page No. : 2/6
Characteristics (Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
ICEO
IEBO
*VCE(sat)
*VCE(sat)
*hFE 1
*hFE 2
*hFE 3
fT
Cob
Min.
60
20
7
-
-
-
-
-
200
230
150
-
-
Typ.
-
-
-
-
-
-
0.35
-
-
-
-
150
Max.
-
-
-
100
1
100
0.5
0.5
-
800
-
-
50
Unit
V
V
V
nA
μA
nA
V
V
-
-
-
MHz
pF
Test Conditions
IC=50μA, IE=0
IC=1mA, IB=0
IE=50μA, IC=0
VCB=50V, IE=0
VCE=15V, IE=0
VEB=7V, IC=0
IC=3A, IB=100mA
IC=3A, IB=60mA
VCE=2V, IC=20mA
VCE=2V, IC=500mA
VCE=2V, IC=2A
VCE=6V, IC=50mA, f=100MHz
VCB=20V, IE=0A, f=1MHz
*Pulse Test : Pulse Width 300μs, Duty Cycle2%
Classification Of hFE2
Rank
Range
Q
230~380
R
340~600
S
560~800
Ordering Information
Device
BTD965A3
BTD965A3
Package
TO-92
(Pb-free)
TO-92
(Pb-free)
Shipping
1000 pcs / bag, 10 bags/box
2000 pcs / Tape & Box
BTD965A3
CYStek Product Specification



Cystech Electonics BTD965A3
CYStech Electronics Corp.
Characteristic Curves
Spec. No. : C847A3
Issued Date : 2003.04.01
Revised Date :2011.02.14
Page No. : 3/6
Current Gain vs Collector Current
1000
VCE=5V
VCE=2V
100
VCE=1V
10
1
10 100 1000
Collector Current---IC(mA)
10000
Saturation Voltage vs Collector Current
1000
VCE(SAT)
IC=50IB
100 IC=40IB
10
1
1
IC=10IB
IC=30IB
10 100 1000
Collector Current---IC(mA)
10000
10000
Saturation Voltage vs Collector Current
VBE(SAT) @ IC=10IB
1000
100
1
10 100 1000
Collector Current---IC(mA)
10000
1
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0
Power Derating Curve
50 100 150
Ambient Temperature---TA(℃)
200
BTD965A3
CYStek Product Specification





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