Planar Transistor. BTD965N3 Datasheet

BTD965N3 Transistor. Datasheet pdf. Equivalent

BTD965N3 Datasheet
Recommendation BTD965N3 Datasheet
Part BTD965N3
Description NPN Planar Transistor
Feature BTD965N3; CYStech Electronics Corp. Low Vcesat NPN Epitaxial Planar Transistor BTD965N3 Spec. No. : C847N3 Is.
Manufacture Cystech Electonics
Datasheet
Download BTD965N3 Datasheet




Cystech Electonics BTD965N3
CYStech Electronics Corp.
Low Vcesat NPN Epitaxial Planar Transistor
BTD965N3
Spec. No. : C847N3
Issued Date : 2003.07.02
Revised Date :2015.02.12
Page No. : 1/6
Features
Low VCE(sat), VCE(sat)=0.35 V (typical), at IC / IB = 3A / 0.1A
Excellent DC current gain characteristics
Complementary to BTB1386N3
Pb-free lead plating and halogen-free package
Symbol
BTD965N3
Outline
SOT-23
BBase
CCollector
EEmitter
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Power Dissipation
Thermal Resistance, Junction to Ambient
Operating Junction Temperature Range
Storage Temperature Range
Note : Single Pulse Pw350μs, Duty2%.
Symbol
VCBO
VCEO
VEBO
IC
ICP
Pd
RθJA
Tj
Tstg
BTD2098N3
Limits
40
20
7
5
8 (Note )
225
556
-55~+150
-55~+150
Unit
V
V
V
A
A
mW
°C/W
°C
°C
CYStek Product Specification



Cystech Electonics BTD965N3
CYStech Electronics Corp.
Spec. No. : C847N3
Issued Date : 2003.07.02
Revised Date :2015.02.12
Page No. : 2/6
Characteristics (Ta=25°C)
Symbol
Min.
Typ.
BVCEO
20
-
BVEBO
7
-
ICBO - -
ICEO - -
IEBO - -
*VCE(sat) - 0.35
*hFE1 230 -
*hFE2 150 -
fT - 150
Cob - -
Max.
-
-
0.1
1
0.1
1.0
800
-
-
50
Unit
V
V
μA
μA
μA
V
-
-
MHz
pF
Test Conditions
IC=1mA, IB=0
IE=10μA, IC=0
VCB=10V, IE=0
VCE=10V, IB=0
VEB=7V, IC=0
IC=3A, IB=0.1A
VCE=2V, IC=500mA
VCE=2V, IC=2A
VCE=6V, IE=50mA, f=200MHz
VCB=20V, IE=0A, f=1MHz
*Pulse Test : Pulse Width 380μs, Duty Cycle2%
Classification Of hFE1
Rank
Range
Q
230~380
R
340~600
S
400~800
Ordering Information
Device
HFE Rank
BTD965N3-Q-T1-G
Q
BTD965N3-R-T1-G
R
BTD965N3-S-T1-G
S
Package
SOT-23 (Pb-free lead plating
and halogen-free package)
SOT-23 (Pb-free lead plating
and halogen-free package)
SOT-23 (Pb-free lead plating
and halogen-free package)
Shipping
3000 pcs / Tape & Reel
3000 pcs / Tape & Reel
3000 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T1 :3000 pcs/tape & reel, 7” reel
Product rank, zero for no rank products
Product name
BTD2098N3
CYStek Product Specification



Cystech Electonics BTD965N3
CYStech Electronics Corp.
Spec. No. : C847N3
Issued Date : 2003.07.02
Revised Date :2015.02.12
Page No. : 3/6
Typical Characteristics
Current Gain vs Collector Current
1000
VCE=5V
VCE=2V
100
VCE=1V
10
1
10 100 1000
Collector Current---IC(mA)
10000
Saturation Voltage vs Collector Current
1000
VCE(SAT)
IC=50IB
100 IC=40IB
10
1
1
IC=10IB
IC=30IB
10 100 1000
Collector Current---IC(mA)
10000
10000
Saturation Voltage vs Collector Current
VBE(SAT) @ IC=10IB
1000
100
1
10 100 1000
Collector Current---IC(mA)
10000
250
200
150
100
50
0
0
Power Derating Curve
50 100 150
Ambient Temperature---TA(℃)
200
BTD2098N3
CYStek Product Specification





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