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TVS Diodes. SSCE5V042N1 Datasheet

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TVS Diodes. SSCE5V042N1 Datasheet






SSCE5V042N1 Diodes. Datasheet pdf. Equivalent




SSCE5V042N1 Diodes. Datasheet pdf. Equivalent





Part

SSCE5V042N1

Description

TVS Diodes



Feature


SSCE5V042N1 SSCE5V042N1 Lo BVV Ultra- low Capacitance Bidirectional Micro Pac kaged TVS Diodes for ESD Protection Description  PIN configuration T he SSCE5V042N1 is designed with Punch-T hrough process TVS technology to protec t voltage sensitive components from ESD . Excellent clamping capability, low le akage, and fast response time provide b est in class protectio.
Manufacture

AFSEMI

Datasheet
Download SSCE5V042N1 Datasheet


AFSEMI SSCE5V042N1

SSCE5V042N1; n on designs that are exposed to ESD. Be cause of its small size, it is suited f or use in cellular phones, MP3 players, digital cameras and many other portabl e applications where board space comes at a premium. Also because of its low c apacitance, it is suited for use in hig h frequency designs such as USB 2.0 hig h speed, USB 3.0 super speed, VGA, DVI, HDMI, ESATA and o.


AFSEMI SSCE5V042N1

ther high speed line applications.  F eature  50W peak pulse power (tP = 8 /20μs)  DFN1006 Package  Working voltage: 5V  Low clamping voltage Low capacitance  RoHS compliant t ransient protection for high speed data lines to IEC61000-4- .


AFSEMI SSCE5V042N1

.

Part

SSCE5V042N1

Description

TVS Diodes



Feature


SSCE5V042N1 SSCE5V042N1 Lo BVV Ultra- low Capacitance Bidirectional Micro Pac kaged TVS Diodes for ESD Protection Description  PIN configuration T he SSCE5V042N1 is designed with Punch-T hrough process TVS technology to protec t voltage sensitive components from ESD . Excellent clamping capability, low le akage, and fast response time provide b est in class protectio.
Manufacture

AFSEMI

Datasheet
Download SSCE5V042N1 Datasheet




 SSCE5V042N1
SSCE5V042N1
SSCE5V042N1
Lo BVV
Ultra-low Capacitance Bidirectional Micro Packaged TVS Diodes for ESD Protection
Description
PIN configuration
The SSCE5V042N1 is designed with Punch-Through
process TVS technology to protect voltage sensitive
components from ESD. Excellent clamping capability, low
leakage, and fast response time provide best in class
protection on designs that are exposed to ESD. Because of its
small size, it is suited for use in cellular phones, MP3 players,
digital cameras and many other portable applications where
board space comes at a premium. Also because of its low
capacitance, it is suited for use in high frequency designs
such as USB 2.0 high speed, USB 3.0 super speed, VGA, DVI,
HDMI, ESATA and other high speed line applications.
Feature
50W peak pulse power (tP = 8/20μs)
DFN1006 Package
Working voltage: 5V
Low clamping voltage
Low capacitance
RoHS compliant transient protection for high speed data
lines to IEC61000-4-2(ESD)±15kV(air),±8kV(contact)
Topview
Applications
DVI & HDMI Port Protection
Serial and Parallel Ports
Projection TV
Notebooks, Desktops, Servers
Solid-state Punch-Through TVS Process
technologyPortable instrumentation
Machanical data
Lead finish:100% matte Sn(Tin)
Mounting position: Any
Qualified max reflow temperature:260
Device meets MSL 1 requirements
Pure tin plating: 7 ~ 17 um
Pin flatness:≤3mil
SSC-V1.0
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 SSCE5V042N1
Electronic Parameter
Symbol
VRWM
IR
VBR
IT
IPP
VC
PPP
C
Parameter
Peak Reverse Working Voltage
Reverse Leakage Current @ VRWM
Breakdown Voltage @ IT
Test Current
Maximum Reverse Peak Pulse Current
Clamping Voltage @ IPP
Peak Pulse Power
Junction Capacitance
SSCE5V042N1
Absolute maximum rating @TA=25
Symbol
PPP
TSTG
TJ
Parameter
Peak Pulse Power8/20μS
Storage Temperature
Operating Temperature
Value
50
-55/+150
-55/+150
Units
W
Electrical Characteristics @TA=25
Parameter
Peak Reverse Working Voltage
Breakdown Voltage
Reverse Leakage Current
Clamping Voltage
Clamping Voltage
Junction Capacitance
Symbol
VRWM
VBR
IR
VC
VC
CJ
Conditions
It = 1mA
VRWM =5.0V, T=25
IPP = 3A, tP = 8/20μs
IPP=4A, tP = 8/20μs
VR=0V, f = 1MHz
Min.
5.6
Typ.
5
10.6
7
Max.
7.8
1
15
12.5
12
Units
V
V
μA
V
V
pF
SSC-V1.0
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 SSCE5V042N1
Typical Performance Characteristics
SSCE5V042N1
10
1
0.1
0.01
0.1
1 10 100
Pulse Duration-tpus)
1000
Non-Repetitive Peak Pulse Power vs. Pulse Time
SSC-V1.0
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3/6
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