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TVS ARRAY. SSCE12V12D2 Datasheet

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TVS ARRAY. SSCE12V12D2 Datasheet






SSCE12V12D2 ARRAY. Datasheet pdf. Equivalent




SSCE12V12D2 ARRAY. Datasheet pdf. Equivalent





Part

SSCE12V12D2

Description

Bidirectional Ultralow Capacitance TVS ARRAY



Feature


SSCEXXX12D2 SSCEXXX12D2 Series Lo Bid irectional Ultralow Capacitance TVS ARR AY  Description  PIN configurat ion The SSCEXXX12D2 is ultra low capac itance transient voltage suppressor arr ays, designed to protect applications s uch as portable electronics and SMART p hones. At higher operating frequencies or faster edge rates, insertion loss an d signal integrity are.
Manufacture

AFSEMI

Datasheet
Download SSCE12V12D2 Datasheet


AFSEMI SSCE12V12D2

SSCE12V12D2; a major concern. This series offers an ultra low capacitance and low leakage c urrent in a miniature SOD-323 package.  Feature  350W peak pulse power ( tP = 8/20μs)  SOD-323 Package  W orking voltage: 3.3V,5V,8V,12V,15V,24V  Low clamping voltage  Low capaci tance  RoHS compliant transient prot ection for high speed data lines to IEC 61000-4-2(ESD)±15kV(air),±8kV(con.


AFSEMI SSCE12V12D2

tact) Topview  Applications  Hand −Held Portable Applications  Netwo rking and Telecom(Ethernet 10/100/1000 Base T)  USB Interface  Automotiv e Electronics  Serial and Parallel P orts  Notebooks, Desktops, Servers M .


AFSEMI SSCE12V12D2

.

Part

SSCE12V12D2

Description

Bidirectional Ultralow Capacitance TVS ARRAY



Feature


SSCEXXX12D2 SSCEXXX12D2 Series Lo Bid irectional Ultralow Capacitance TVS ARR AY  Description  PIN configurat ion The SSCEXXX12D2 is ultra low capac itance transient voltage suppressor arr ays, designed to protect applications s uch as portable electronics and SMART p hones. At higher operating frequencies or faster edge rates, insertion loss an d signal integrity are.
Manufacture

AFSEMI

Datasheet
Download SSCE12V12D2 Datasheet




 SSCE12V12D2
SSCEXXX12D2
SSCEXXX12D2 Series
Lo
Bidirectional Ultralow Capacitance TVS ARRAY
Description
PIN configuration
The SSCEXXX12D2 is ultra low capacitance transient
voltage suppressor arrays, designed to protect applications
such as portable electronics and SMART phones. At higher
operating frequencies or faster edge rates, insertion loss and
signal integrity are a major concern. This series offers an
ultra low capacitance and low leakage current in a miniature
SOD-323 package.
Feature
350W peak pulse power (tP = 8/20μs)
SOD-323 Package
Working voltage: 3.3V,5V,8V,12V,15V,24V
Low clamping voltage
Low capacitance
RoHS compliant transient protection for high speed data
lines to IEC61000-4-2(ESD)±15kV(air),±8kV(contact)
Topview
Applications
Hand−Held Portable Applications
Networking and Telecom(Ethernet
10/100/1000 Base T)
USB Interface
Automotive Electronics
Serial and Parallel Ports
Notebooks, Desktops, Servers
Machanical data
Lead finish:100% matte Sn(Tin)
Mounting position: Any
Qualified max reflow temperature:260
Device meets MSL 1 requirements
Pure tin plating: 7 ~ 17 um
Pin flatness:≤3mil
Electronic Parameter
Symbol
VRWM
IR
VBR
IT
IPP
VC
PPP
C
Parameter
Peak Reverse Working Voltage
Reverse Leakage Current @ VRWM
Breakdown Voltage @ IT
Test Current
Maximum Reverse Peak Pulse Current
Clamping Voltage @ IPP
Peak Pulse Power
Junction Capacitance
SSC-V2.1
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 SSCE12V12D2
SSCEXXX12D2
Absolute maximum rating @TA=25
Parameter
Peak Pulse Power (tp=8/20μs waveform)
ESD Rating per IEC61000-4-2
Contact
Air
Lead Soldering Temperature
Operating Temperature Range
Storage Temperature Range
Lead Solder Temperature − Maximum (10 Second Duration)
Symbol
PPPP
TL
TJ
TSTG
TL
Value
350
8
15
260 (10 sec.)
-55 ~ 150
-55 ~ 150
260
Unit
Watts
KV
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
*Other voltages may be available upon request.
1. Non-repetitive current pulse, per Figure 1.
Electrical Characteristics @TA=25
Device
Marking
VRWM
IR @
VRWM
VBR @ 1 mA
(Volts)
(V) (uA)
Min
SSCE3V312D2
CC 3.3
5
4
SSCE5V012D2 AC 5
1
6
SSCE8V012D2 BC 8
1
8.5
SSCE12V12D2
DC 12
1
13.3
SSCE15V12D2
EC 15
1
16.7
SSCE24V12D2
HC 24
1
26.7
VC1
@1A
(V)
7.5
9.8
13.6
17.8
23.5
38
Ipp@8/20us
(Amps)
Max.
20
17
15
11
10
6
Capacitance
@ VR = 0 V, 1 MHz (pF)
Typ Max.
0.8 1.5
0.8 1.5
0.8 1.5
0.8 1.5
0.8 1.5
0.8 1.5
PPK
(W)
350
350
350
350
350
350
SSC-V2.1
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 SSCE12V12D2
Typical Performance Characteristics
SSCEXXX12D2
10
1
0.1
0.01
0.1
1 10 100
Pulse Duration-tpus)
1000
Non-Repetitive Peak Pulse Power vs. Pulse Time
SSC-V2.1
www.afsemi.com
3/5
Analog Future



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