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TVS Diodes. SSCE12V22N1 Datasheet

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TVS Diodes. SSCE12V22N1 Datasheet






SSCE12V22N1 Diodes. Datasheet pdf. Equivalent




SSCE12V22N1 Diodes. Datasheet pdf. Equivalent





Part

SSCE12V22N1

Description

TVS Diodes



Feature


SSCE12V22N1 SSCE12V22N1 Lo BVV Low-Ca pacitance Bidirectional Micro Packaged TVS Diodes for ESD Protection  Desc ription  PIN configuration The SSC E12V22N1 is designed with Weipan Punch- Through process TVS technology to prote ct voltage sensitive components from ES D. Excellent clamping capability, low l eakage, and fast response time provide best in class protecti.
Manufacture

AFSEMI

Datasheet
Download SSCE12V22N1 Datasheet


AFSEMI SSCE12V22N1

SSCE12V22N1; on on designs that are exposed to ESD. B ecause of its small size, it is suited for use in cellular phones, MP3 players , digital cameras and many other portab le applications where board space comes at a premium. Also because of its low capacitance, it is suited for use in hi gh frequency designs such as USB 2.0 hi gh speed, VGA, DVI, SDI and other high speed line applica.


AFSEMI SSCE12V22N1

tions. It has been specifically designed to protect sensitive components which are connected to high-speed data and tr ansmission lines from overvoltage cause d by ESD(electrostatic discharge), CDE (Cable Discharge Events),and EFT (elect rical fast transients .


AFSEMI SSCE12V22N1

.

Part

SSCE12V22N1

Description

TVS Diodes



Feature


SSCE12V22N1 SSCE12V22N1 Lo BVV Low-Ca pacitance Bidirectional Micro Packaged TVS Diodes for ESD Protection  Desc ription  PIN configuration The SSC E12V22N1 is designed with Weipan Punch- Through process TVS technology to prote ct voltage sensitive components from ES D. Excellent clamping capability, low l eakage, and fast response time provide best in class protecti.
Manufacture

AFSEMI

Datasheet
Download SSCE12V22N1 Datasheet




 SSCE12V22N1
SSCE12V22N1
SSCE12V22N1
Lo BVV
Low-Capacitance Bidirectional Micro Packaged TVS Diodes for ESD Protection
Description
PIN configuration
The SSCE12V22N1 is designed with Weipan
Punch-Through process TVS technology to protect voltage
sensitive components from ESD. Excellent clamping
capability, low leakage, and fast response time provide best
in class protection on designs that are exposed to ESD.
Because of its small size, it is suited for use in cellular
phones, MP3 players, digital cameras and many other
portable applications where board space comes at a
premium. Also because of its low capacitance, it is suited for
use in high frequency designs such as USB 2.0 high speed,
VGA, DVI, SDI and other high speed line applications.
It has been specifically designed to protect sensitive
components which are connected to high-speed data and
transmission lines from overvoltage caused by
ESD(electrostatic discharge), CDE (Cable Discharge
Events),and EFT (electrical fast transients).
Topview
Applications
DVI & HDMI Port Protection
Serial and Parallel Ports
Projection TV
Notebooks, Desktops, Server
USB 1.1/2.0/3.0/3.1/OTG
Feature
80W peak pulse power (TP = 8/20μs)
DFN1006 Package
Working voltage: 12V
Low clamping voltage
Low capacitance
RoHS compliant transient protection for high speed data
lines to IEC61000-4-2(ESD)±15kV(air),±8kV(contact)
Machanical data
Lead finish:100% matte Sn(Tin)
Mounting position: Any
Qualified max reflow temperature:260
Device meets MSL 1 requirements
Pure tin plating: 7 ~ 17 um
Pin flatness:≤3mil
SSC-V1.0
www.afsemi.com
1/6
Analog Future




 SSCE12V22N1
Electronic Parameter
Symbol
VRWM
IR
VBR
IT
IPP
VC
PPP
C
Parameter
Peak Reverse Working Voltage
Reverse Leakage Current @ VRWM
Breakdown Voltage @ IT
Test Current
Maximum Reverse Peak Pulse Current
Clamping Voltage @ IPP
Peak Pulse Power
Junction Capacitance
SSCE12V22N1
Absolute maximum rating @TA=25
Symbol
PPP
TSTG
TJ
Parameter
Peak Pulse Power8/20μS
Storage Temperature
Operating Temperature
Value
80
-55/+150
-55/+150
Units
W
Electrical Characteristics @TA=25
Parameter
Peak Reverse Working Voltage
Breakdown Voltage
Reverse Leakage Current
Clamping Voltage
Clamping Voltage
Junction Capacitance
Symbol
VRWM
VBR
IR
VC
VC
CJ
Conditions
Any I/O to Ground
It = 1mA
Any I/O to Ground
VRWM =12V, T=25
IPP =1A, tP = 8/20μs
IPP=5A, tP = 8/20μs
VR = 0V, f = 1MHz,
any I/O pin to Ground
Min.
13.3
Typ.
12
14.3
0.01
13.9
16
3.5
Max.
0.2
20
5
Units
V
V
μA
V
V
pF
SSC-V1.0
www.afsemi.com
2/6
Analog Future




 SSCE12V22N1
Typical Performance Characteristics
SSCE12V22N1
10
1
0.1
0.01
0.1
1 10 100
Pulse Duration-tpus)
1000
Non-Repetitive Peak Pulse Power vs. Pulse Time
SSC-V1.0
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3/6
Analog Future



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