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Capacitance Array. SSCE2V512N8 Datasheet

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Capacitance Array. SSCE2V512N8 Datasheet






SSCE2V512N8 Array. Datasheet pdf. Equivalent




SSCE2V512N8 Array. Datasheet pdf. Equivalent





Part

SSCE2V512N8

Description

Low Capacitance Array



Feature


SSCE2V512N8 SSCE2V512N8 Lo BVV Low Ca pacitance Array for ESD Protection  Description The SSCE2V512N8 provides a typical line to line capacitance of 1 .1pF and low insertion loss up to 2GHz providing greater signal integrity maki ng it ideally suited for GbE, USB 2.0 a pplications, such as Digital TVS, DVD p layers, Computer, set-top boxes and MDD I applications in mo.
Manufacture

AFSEMI

Datasheet
Download SSCE2V512N8 Datasheet


AFSEMI SSCE2V512N8

SSCE2V512N8; bile computing devices. It has been spec ifically designed to protect sensitive components which are connected to high- speed data and transmission lines from overvoltage caused by Lighting, ESD(ele ctrostatic discharge), CDE (Cable Disch arge Events),and EFT (electrical fast t ransients).  PIN configuration 2.0m m 567 8 1.0mm 43 21 DFN2010-8L  Feature  protects eig.


AFSEMI SSCE2V512N8

ht I/O lines  Low capacitance:0.47p F  Working voltages : 2.5V  Low l eakage current  Response Time is < 1 ns  Low capacitance for high-speed interfaces  No insertion loss to 2.0 GHz  Solid-state silicon avalanche t echnology  Mee .


AFSEMI SSCE2V512N8

.

Part

SSCE2V512N8

Description

Low Capacitance Array



Feature


SSCE2V512N8 SSCE2V512N8 Lo BVV Low Ca pacitance Array for ESD Protection  Description The SSCE2V512N8 provides a typical line to line capacitance of 1 .1pF and low insertion loss up to 2GHz providing greater signal integrity maki ng it ideally suited for GbE, USB 2.0 a pplications, such as Digital TVS, DVD p layers, Computer, set-top boxes and MDD I applications in mo.
Manufacture

AFSEMI

Datasheet
Download SSCE2V512N8 Datasheet




 SSCE2V512N8
SSCE2V512N8
SSCE2V512N8
Lo BVV
Low Capacitance Array for ESD Protection
Description
The SSCE2V512N8 provides a typical line to line
capacitance of 1.1pF and low insertion loss up to 2GHz
providing greater signal integrity making it ideally suited for
GbE, USB 2.0 applications, such as Digital TVS, DVD
players, Computer, set-top boxes and MDDI applications in
mobile computing devices.
It has been specifically designed to protect sensitive
components which are connected to high-speed data and
transmission lines from overvoltage caused by Lighting,
ESD(electrostatic discharge), CDE (Cable Discharge
Events),and EFT (electrical fast transients).
PIN configuration
2.0mm
567
8
43 21
DFN2010-8L
Feature
protects eight I/O lines
Low capacitance0.47pF
Working voltages : 2.5V
Low leakage current
Response Time is < 1 ns
Low capacitance for high-speed interfaces
No insertion loss to 2.0GHz
Solid-state silicon avalanche technology
Meets MSL 1 Requirements
ROHS compliant
Panjing technology
Protection solution to meet
IEC61000-4-2 (ESD) ±30kV (air), ±30kV (contact)
IEC61000-4-4 (EFT) 40A (5/50ns)
Applications
Digital Visual Interface (DVI)
10/100/1000 Ethernet
USB 1.1/2.0/OTG
IEEE 1394 Firewire Ports
Projection TV Monitors and Flat Panel
Displays
Notebook Computers
Set Top Box
Projection TV
Machanical data
Lead finish:100% matte Sn(Tin)
Mounting position: Any
Qualified max reflow temperature:260
Device meets MSL 1 requirements
Pure tin plating: 7 ~ 17 um
Pin flatness:≤3mil
SSC-V1.0
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1/6
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 SSCE2V512N8
Electronic Parameter
Symbol
VRWM
VPT
VSB
VC
IT
IRM
IPP
CJ
Parameter
Working Peak Reverse Voltage
Punch-Through Voltage@ IPT
Snap-Back Voltage@ ISB
Clamping Voltage @ IPP
Test Current
Leakage current at VRWM
Peak pulse current
Junction Capacitance
SSCE2V512N8
VSB
VC VPT
VRWM
I
IPP
ISB
IPT
IR
IR
IPT
ISB
IPP
VRWM VPT VC
VSB
V
Absolute maximum rating @TA=25
Symbol
PPPP
TL
TJ
TSTG
Parameter
Peak Pulse Power (tp=8/20μs waveform)
ESD Rating per IEC61000-4-2
Contact
Air
Lead Soldering Temperature
Operating Temperature Range
Storage Temperature Range
Value
400
+/- 30
+/- 30
260 (10 sec.)
-55 ~ 150
-55 ~ 150
Units
Watts
KV
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit
values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not
implied, damage may occur and reliability may be affected.
*Other voltages may be available upon request.
1. Non-repetitive current pulse, per Figure 1.
SSC-V1.0
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 SSCE2V512N8
SSCE2V512N8
Electrical Characteristics @TA=25
Symbol
Parameter
VRWM Reverse Working Voltage
VSB Snap-Back Voltage
VPT Punch-Through Voltage
IR Reverse Leakage Current
Clamping Voltage
VC
between I/O pins
CJ Junction Capacitance
CJ Junction Capacitance
Junction capacitance is measured in VR=0V,F=1MHz
Conditions
between I/O pins
ISB = 45mA,
between I/O pins
I PT = 2uA
between I/O pins
VRWM = 2.5V,
between I/O pins
IPP = 1A, tp =8/20μs
IPP = 20A, tp =8/20μs
VR = 0V, f = 1MHz,
between I/O pins
VR = 2.5V, f = 1MHz,
between I/O pins
Min.
2.8
Typ.
Max. Units
2.5 V
V
3.5 V
0.05
4.7 5.6
15.1 22
1.1
μA
V
V
pF
0.47 0.9
pF
Typical Performance Characteristics
110
100
90
80
70
60
50
40
30
20
10
0
0
Waveform
Parameters:
tr=8us
td=20us
td=IPP/2
5 10 15 20 25 30
Time (us)
Pulse Waveform
110
100
90
80
70
60
50
40
30
20
10
0
0
25 50 75
100 125
Ambient Temperature-TA
150
Power Derating Curve
SSC-V1.0
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3/6
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