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TVS Diodes. SSCT12V11L2 Datasheet

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TVS Diodes. SSCT12V11L2 Datasheet






SSCT12V11L2 Diodes. Datasheet pdf. Equivalent




SSCT12V11L2 Diodes. Datasheet pdf. Equivalent





Part

SSCT12V11L2

Description

TVS Diodes



Feature


.
Manufacture

AFSEMI

Datasheet
Download SSCT12V11L2 Datasheet


AFSEMI SSCT12V11L2

SSCT12V11L2; .


AFSEMI SSCT12V11L2

.


AFSEMI SSCT12V11L2

.

Part

SSCT12V11L2

Description

TVS Diodes



Feature


.
Manufacture

AFSEMI

Datasheet
Download SSCT12V11L2 Datasheet




 SSCT12V11L2
SSCT12V11L2
SSCT12V11L2
High Power TVS Diode
Description
Lo BVV
PIN configuration
The SSCT12V11L2 is a high power TVS, utilizing leading
monolithic silicon technology to provide fast response time
and low ESD clamping voltage, making this device an ideal
solution for protecting voltage sensitive lines. The
SSCT12V11L2 complies with the IEC 610002 (ESD) standard
with ±30kV air and ±30kV contact discharge. It is assembled
into a 3pin DFN20203 package. The leads are finished with
NiPdAu. Each device will protect one line. The combination
of small size, and high surge capability makes them ideal for
use in applications such as cellular phones, LCD displays,
USB, and multimedia card interfaces.
Feature
3000W peak pulse power (TP = 8/20μs)
DFN2020-3Package
Working voltage: 12V
Low clamping voltage
Low capacitance
RoHS compliant transient protection for high speed data
lines to IEC61000-4-2(ESD)±30kV(air),±30kV(contact)
Topview
Applications
DVI & HDMI Port Protection
Serial and Parallel Ports
Projection TV
Notebooks, Desktops, Server
USB 1.1/2.0/3.0/3.1/OTG
Machanical data
Lead finish:100% matte Sn(Tin)
Mounting position: Any
Qualified max reflow temperature:260
Device meets MSL 1 requirements
Pure tin plating: 7 ~ 17 um
Pin flatness:≤3mil
SSC-V1.0
www.afsemi.com
1/6
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 SSCT12V11L2
Electronic Parameter
Symbol
VRWM
IR
VBR
IT
IPP
VC
PPP
C
Parameter
Peak Reverse Working Voltage
Reverse Leakage Current @ VRWM
Breakdown Voltage @ IT
Test Current
Maximum Reverse Peak Pulse Current
Clamping Voltage @ IPP
Peak Pulse Power
Junction Capacitance
SSCT12V11L2
Absolute maximum rating @TA=25
Symbol
PPP
TSTG
TJ
Parameter
Peak Pulse Power8/20μS
Storage Temperature
Operating Temperature
Value
250
-55/+150
-55/+150
Units
W
Electrical Characteristics @TA=25
Parameter
Peak Reverse Working Voltage
Breakdown Voltage
Reverse Leakage Current
Clamping Voltage
Clamping Voltage
Junction Capacitance
Symbol
VRWM
VBR
IR
VC
VC
CJ
Conditions
Any I/O to Ground
It = 1mA
Any I/O to Ground
VRWM =12V, T=25
IPP =50A, tP = 8/20μs
IPP=110A, tP = 8/20μs
VR = 0V, f = 1MHz,
any I/O pin to Ground
Min.
Typ.
12
14.53
20
25
870
Max.
1
27.2
Units
V
V
μA
V
V
pF
SSC-V1.0
www.afsemi.com
2/6
Analog Future




 SSCT12V11L2
Typical Performance Characteristics
SSCT12V11L2
10
1
0.1
0.01
0.1
1 10 100
Pulse Duration-tpus)
1000
Non-Repetitive Peak Pulse Power vs. Pulse Time
SSC-V1.0
www.afsemi.com
3/6
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