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TVS Diode. SSCT7V011D2 Datasheet

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TVS Diode. SSCT7V011D2 Datasheet






SSCT7V011D2 Diode. Datasheet pdf. Equivalent






SSCT7V011D2 Diode. Datasheet pdf. Equivalent


SSCT7V011D2

Part

SSCT7V011D2

Description

Mount TVS Diode



Feature


SSCTXXV11D2 SSCTXXV11D2 Lo BVV Mount TVS Diode for ESD Protection  Descr iption  PIN configuration The SSCT XXV11D2 Series is designed with Panjing technology to protect voltage sensitiv e components from Surge. Excellent clam ping capability, low leakage, and fast response time provide best in class pro tection on designs that are exposed to surge. It has been spe.
Manufacture

AFSEMI

Datasheet
Download SSCT7V011D2 Datasheet


AFSEMI SSCT7V011D2

SSCT7V011D2; cifically designed to protect sensitive components which are connected to data and transmission lines from overvoltage caused by ESD(electrostatic discharge) , and EFT (electrical fast transients).  Feature  Peak Power Dissipation − 1800W (8 x 20 us Waveform)  Sta nd-off Voltage:5、7、12、15 V  Pr otects I/O Port  Low Clamping Voltag e  Low Leakage  Response Time is <.


AFSEMI SSCT7V011D2

1 ns  Meets MSL 1 Requirements  S olid-state silicon avalanche technology  ESD Rating of above 16 kV per Huma n Body Model  Lead Orientation in Ta pe: Cathode Lead to Sprocket Holes  ROHS compliant  Panjing technology .

Part

SSCT7V011D2

Description

Mount TVS Diode



Feature


SSCTXXV11D2 SSCTXXV11D2 Lo BVV Mount TVS Diode for ESD Protection  Descr iption  PIN configuration The SSCT XXV11D2 Series is designed with Panjing technology to protect voltage sensitiv e components from Surge. Excellent clam ping capability, low leakage, and fast response time provide best in class pro tection on designs that are exposed to surge. It has been spe.
Manufacture

AFSEMI

Datasheet
Download SSCT7V011D2 Datasheet




 SSCT7V011D2
SSCTXXV11D2
SSCTXXV11D2
Lo BVV
Mount TVS Diode for ESD Protection
Description
PIN configuration
The SSCTXXV11D2 Series is designed with Panjing
technology to protect voltage sensitive components from
Surge. Excellent clamping capability, low leakage, and fast
response time provide best in class protection on designs that
are exposed to surge.
It has been specifically designed to protect sensitive
components which are connected to data and transmission
lines from overvoltage caused by ESD(electrostatic
discharge), and EFT (electrical fast transients).
Feature
Peak Power Dissipation − 1800W (8 x 20 us
Waveform)
Stand-off Voltage:571215 V
Protects I/O Port
Low Clamping Voltage
Low Leakage
Response Time is < 1 ns
Meets MSL 1 Requirements
Solid-state silicon avalanche technology
ESD Rating of above 16 kV per Human Body Model
Lead Orientation in Tape: Cathode Lead to Sprocket
Holes
ROHS compliant
Panjing technology
Applications
Power Line
Serial and Parallel Ports
Notebooks, Desktops, Servers
Projection TV
Cellular handsets and accessories
Portable instrumentation
Peripherals
Machanical data
Lead finish:100% matte Sn(Tin)
Mounting position: Any
Qualified max reflow temperature:260
Device meets MSL 1 requirements
Pure tin plating: 7 ~ 17 um
Pin flatness:≤3mil
Protection solution to meet
IEC61000-4-2 (ESD) ±15kV (air), ±8kV
(contact)
IEC61000-4-4 (EFT) 40A (5/50ns)
SSC-V1.0
www.afsemi.com
1/6
Analog Future




 SSCT7V011D2
SSCTXXV11D2
Electronic Parameter
Symbol
VRWM
VBR
VC
IT
IRM
IPP
CO
CJ
Parameter
Working Peak Reverse Voltage
Breakdown Voltage @ IT
Clamping Voltage @ IPP
Test Current
Leakage current at VRWM
Peak pulse current
Off-state Capacitance
Junction Capacitance
I
VF
VC VBR VRWM
IR IF
IT
IPP
V
Absolute maximum rating @TA=25
Symbol
PPPP
TL
TJ
TSTG
TL
Parameter
Peak Pulse Power (tp=8/20μs waveform)
ESD Rating per IEC61000-4-2
Contact
Air
Lead Soldering Temperature
Operating Temperature Range
Storage Temperature Range
Lead Solder Temperature − Maximum (10 Second
Duration)
Value
1800
30
30
260 (10 sec.)
-55 ~ 150
-55 ~ 150
260
Units
Watts
KV
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit
values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not
implied, damage may occur and reliability may be affected.
*Other voltages may be available upon request.
1. Non-repetitive current pulse, per Figure 1.
Electrical Characteristics @TA=25
Device* Mark
SSCT5V011D2
SSCT7V011D2
SSCT12V11D2
SSCT15V11D2
5H
7H
12H
15H
VRWM
(V)
5
7
12
15
VBR @ IT (V)
Min Max
6 7.8
7.8 9.7
13 17
16.7 19.6
IT
(mA)
1
1
1
1
IR @ VRWM
(uA)
1
1
1
1
VC@IPP
(V)
15V@100A
17V@100A
30V@70A
30V@50A
IPP(Max)
(A)
130
130
80
65
Capacitance
(Typ) (nF)
Typ Max
1.1 1.5
0.8 1.1
0.4 0.6
0.4 0.55
SSC-V1.0
www.afsemi.com
2/6
Analog Future



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