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voltage suppressors. SSCT6V032DB Datasheet

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voltage suppressors. SSCT6V032DB Datasheet






SSCT6V032DB suppressors. Datasheet pdf. Equivalent




SSCT6V032DB suppressors. Datasheet pdf. Equivalent





Part

SSCT6V032DB

Description

Thyristors Solid Protection Device Bidirectional transient voltage suppressors



Feature


.
Manufacture

AFSEMI

Datasheet
Download SSCT6V032DB Datasheet


AFSEMI SSCT6V032DB

SSCT6V032DB; .


AFSEMI SSCT6V032DB

.


AFSEMI SSCT6V032DB

.

Part

SSCT6V032DB

Description

Thyristors Solid Protection Device Bidirectional transient voltage suppressors



Feature


.
Manufacture

AFSEMI

Datasheet
Download SSCT6V032DB Datasheet




 SSCT6V032DB
SSCT6V032DB
SSCT6V032DB Lo BVV
Thyristors Solid Protection Device Bidirectional transient voltage suppressors
Description
PIN configuration
The SSCT6V032DB is designed with Punch-Through
process TVS technology to protect voltage sensitive
components from ESD. Excellent clamping capability, low
leakage, and fast response time provide best in class
protection on designs that are exposed to ESD. Because of its
small size, it is suited for use in cellular phones, MP3 players,
digital cameras and many other portable applications where
board space comes at a premium.Also because of its low
capacitance, it is suited for use in high frequency designs
such as USB 2.0 high speed, USB 3.0 super speed, VGA, DVI,
HDMI, ESATA and other high speed line applications.
SMB
Features
For surface mounted applications to optimize board
space
Low profile package
Bidirectional crowbar protection
Low leakage current : I = 5uA max
Low on-state voltage
Low Capacitance
Response Time is < 1us
YD/T 950 IEC 61000-4-5
YD/T 993 ITU K.20/21
YD/T 1082 TIA-968-A
GR 1089 Intra-building
Solid-state silicon technology
Meets MSL 1 Requirements
ROHS compliant
WeiPan technology
SSC-V1.0www.afsemi.com
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1/5




 SSCT6V032DB
Electronic Parameter
Symbol
VRM
VBR
VBO
IBO
IRM
IPP
IH
VT
CO
Parameter
Stand-off voltage
Breakdown voltage
Switching Voltage
Breakover current
Leakage current at VRM
Peak pulse current
Holding current
On-state Voltage at IT
Off-state Capacitance
SSCT6V032DB
VBO VRM
IBO
Ih
IR
IR
Ih
IBO
VVRM
VBO
Absolute maximum rating @TA=25
Symbol
Parameter
IPP Non-repetitive peak pulse current
VPP
VESD
Ts
Tj
Non-repetitive peak pulse voltage
ESD Rating per IEC61000-4-2
Storage temperature range
Maximum junction temperature
Contact
Air
10/1000 us
5/310 us
8/20 us
10/700us
Value
100
150
400
6000
8
15
-40 to +150
150
Units
A
V
KV
Electrical Characteristics @TA=25
Type
SSCT6V032DB
VRM
Min.
V
6
IRM VBO
Max.
μA V
5 25
IBO
Max.
mA
800
VT IT
Max.
VA
4 2.2
CO
Typ.
IH
Typ.
pF mA
100 50
SSC-V1.0www.afsemi.com
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 SSCT6V032DB
Typical Performance Characteristics
%IPP
100
Repetitive peak current
Tr=rise time(us)
Tp =pulse duration time (us)
50
tr tp
Fig.1 Pulse Waveform (5/310us)
40
ITSM(A)
30
F=50HZ
Tj=25
SSCT6V032DB
1
C[VR]/C[VR=50V]
Tj=25
0.8 F=1MHZ
VRMS=2V
0.6
0.4
0.2
0
1 2 5 10 20 50 100 300
Fig. 2 Relation Variation of Junction Capacitance
Versus Reverse Voltage Applied (Typical Values)
100
IT(A)
Tj=25
20
10
t(s)
0
1.E-02
1.E-01 1.E+00 1.E+01 1.E+02
1.E+03
Fig.3 Non Repetitive Surge Peek On-State
Current Versus Overload Duration
10
0
VT(V)
12345678
Fig.4 On-State Voltage Versus On-State Current
(Typical Values)
2.0
IH(TJ)/IH[Tj=25]
1.0
0
-40 -20
0
Tj()
20 40 60 80 100 120 130
1.08
1.07 VBO[Tj]/VBO[Tj=25]
1.06
1.05
1.04
1.03
1.02
1.01
1.00
0.99
0.98
0.97
0.96 Tj()
0.95
0.94
-40 -20 0 20 40 60 80 100 120 130
Fig.5 Relative Variation of Hold Current Versus
Junction Temperature
SSC-V1.0www.afsemi.com
Fig.6 Relative Variation of Break Over Voltage
Versus Junction Temperature
3/5
Analog Future



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