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FQPF8N50 Dataheets PDF



Part Number FQPF8N50
Manufacturers OuCan
Logo OuCan
Description 9A N-Channel MOSFET
Datasheet FQPF8N50 DatasheetFQPF8N50 Datasheet (PDF)

FQP8N50/FQPF8N50 500V, 9A N-Channel MOSFET General Description Product Summary The FQP8N50&FQPF8N50 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications. By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs. VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) 100% UIS Tested 1.

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FQP8N50/FQPF8N50 500V, 9A N-Channel MOSFET General Description Product Summary The FQP8N50&FQPF8N50 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications. By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs. VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) 100% UIS Tested 100% Rg Tested TO-220 Top View TO-220F 600V@150℃ 9A < 0.85W D G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol FQP8N50 FQPF8N50 Drain-Source Voltage VDS 500 Gate-Source Voltage VGS ±30 Continuous Drain TC=25°C Current TC=100°C Pulsed Drain Current C Avalanche Current C Repetitive avalanche energy C Single plused avalanche energy G Peak diode recovery dv/dt ID IDM IAR EAR EAS dv/dt 9 9* 6 6* 30 3.2 154 307 5 TC=25°C Power Dissipation B D.


FQP8N50 FQPF8N50 ISPLSI1024


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