Document
FQP8N50/FQPF8N50
500V, 9A N-Channel MOSFET
General Description
Product Summary
The FQP8N50&FQPF8N50 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications. By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs.
VDS ID (at VGS=10V) RDS(ON) (at VGS=10V)
100% UIS Tested 100% Rg Tested
TO-220
Top View
TO-220F
600V@150℃ 9A < 0.85W
D
G S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
FQP8N50
FQPF8N50
Drain-Source Voltage
VDS 500
Gate-Source Voltage
VGS ±30
Continuous Drain
TC=25°C
Current
TC=100°C
Pulsed Drain Current C
Avalanche Current C
Repetitive avalanche energy C
Single plused avalanche energy G
Peak diode recovery dv/dt
ID
IDM IAR EAR EAS dv/dt
9 9* 6 6*
30 3.2 154 307
5
TC=25°C Power Dissipation B D.