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WMG10N60VD

WAYON

Super Junction Power MOSFET

WML10N60VD, WMK10N60VD, WMH10N60VD, WMM10N60VD WMN10N60VD, WMO10N60VD, WMP10N60VD, WMG10N60VD 600V 0.8Ω Super Junction P...


WAYON

WMG10N60VD

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Description
WML10N60VD, WMK10N60VD, WMH10N60VD, WMM10N60VD WMN10N60VD, WMO10N60VD, WMP10N60VD, WMG10N60VD 600V 0.8Ω Super Junction Power MOSFET Description WMOSTM VD is Wayon’s new high voltage power MOSFET family that is utilizing advanced technology for extremely low on-resistance and low gate charge performance. WMOSTM VD is suitable for applications which require superior power density and outstanding efficiency. Features  VDS =650V @ Tj,max  IDM =12.5A  Typ. RDS(on) =0.8Ω  100% UIS tested  Pb-free plating, Halogen free Applications LED Lighting, Charger, Adapter, PC, LCD TV, Server D GD S TO-220F S G TO-263 G GD S TO-220 GD S TO-262 D DS G TO-251 S G TO-252 G DS S GD TO-251S3 TO-251S2 RoHS compliant Absolute Maximum Ratings Parameter Drain-source voltage Continuous drain current1) Pulsed drain current2) ( TC = 25°C ) ( TC = 100°C ) Gate-source voltage Avalanche energy, single pulse3) Avalanche energy, repetitive2) Avalanche current, repetitive2) Power...




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