Super Junction Power MOSFET
WML10N60VD, WMK10N60VD, WMH10N60VD, WMM10N60VD WMN10N60VD, WMO10N60VD, WMP10N60VD, WMG10N60VD
600V 0.8Ω Super Junction P...
Description
WML10N60VD, WMK10N60VD, WMH10N60VD, WMM10N60VD WMN10N60VD, WMO10N60VD, WMP10N60VD, WMG10N60VD
600V 0.8Ω Super Junction Power MOSFET
Description
WMOSTM VD is Wayon’s new high voltage power MOSFET family that is utilizing advanced technology for extremely low on-resistance and low gate charge performance. WMOSTM VD is suitable for applications which require superior power density and outstanding efficiency.
Features
VDS =650V @ Tj,max IDM =12.5A Typ. RDS(on) =0.8Ω 100% UIS tested Pb-free plating, Halogen free
Applications
LED Lighting, Charger, Adapter, PC, LCD TV, Server
D
GD S
TO-220F
S G
TO-263
G
GD S
TO-220
GD S
TO-262
D
DS G
TO-251
S G
TO-252
G DS
S GD
TO-251S3 TO-251S2
RoHS
compliant
Absolute Maximum Ratings
Parameter
Drain-source voltage Continuous drain current1)
Pulsed drain current2)
( TC = 25°C ) ( TC = 100°C )
Gate-source voltage Avalanche energy, single pulse3) Avalanche energy, repetitive2) Avalanche current, repetitive2)
Power...
Similar Datasheet