Super Junction Power MOSFET
WMN04N60C2 WMM04N60C2, WMK04N60C2
600V 1.7Ω Super Junction Power MOSFET
Description
WMOSTM C2 is Wayon’s 2nd generation...
Description
WMN04N60C2 WMM04N60C2, WMK04N60C2
600V 1.7Ω Super Junction Power MOSFET
Description
WMOSTM C2 is Wayon’s 2nd generation super junction MOSFET family that is utilizing charge balance technology for extremely low on-resistance and low gate charge performance. WMOSTM C2 is suitable for applications which require superior power density and outstanding efficiency.
Features
VDS =650V @ Tj,max Typ. RDS(on) =1.7Ω 100% UIS tested Pb-free plating, Halogen free
Applications
LED Lighting, Charger, Adapter, PC, LCD TV, Server
D
S G
TO-263
GD S
TO-220
GDS
TO-262
RoHS
compliant
Absolute Maximum Ratings
Parameter
Drain-source voltage Continuous drain current1)
Pulsed drain current2)
( TC = 25°C ) ( TC = 100°C )
Gate-source voltage Avalanche energy, single pulse3) Avalanche energy, repetitive2) Avalanche current, repetitive2)
Power dissipation ( TC = 25°C ) - Derate above 25°C
Operating and storage temperature range
Continuous diode forward current
Diode pulse c...
Similar Datasheet