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WMM12N60VD Dataheets PDF



Part Number WMM12N60VD
Manufacturers WAYON
Logo WAYON
Description Super Junction Power MOSFET
Datasheet WMM12N60VD DatasheetWMM12N60VD Datasheet (PDF)

WML12N60VD, WMK12N60VD, WMM12N60VD WMN12N60VD, WMP12N60VD, WMO12N60VD 600V 0.6Ω Super Junction Power MOSFET Description WMOSTM VD is Wayon’s new high voltage power MOSFET family that is utilizing advanced technology for extremely low on-resistance and low gate charge performance. WMOSTM VD is suitable for applications which require superior power density and outstanding efficiency. Features  VDS =650V @ Tj,max  IDM =18A  Typ. RDS(on) =0.6Ω  100% UIS tested  Pb-free plating, Halogen free Ap.

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WML12N60VD, WMK12N60VD, WMM12N60VD WMN12N60VD, WMP12N60VD, WMO12N60VD 600V 0.6Ω Super Junction Power MOSFET Description WMOSTM VD is Wayon’s new high voltage power MOSFET family that is utilizing advanced technology for extremely low on-resistance and low gate charge performance. WMOSTM VD is suitable for applications which require superior power density and outstanding efficiency. Features  VDS =650V @ Tj,max  IDM =18A  Typ. RDS(on) =0.6Ω  100% UIS tested  Pb-free plating, Halogen free Applications LED Lighting, Charger, Adapter, PC, LCD TV, Server GDS TO-220F D GDS TO-262 GD S TO-220 D S G TO-263 GD S TO-251 S G TO-252 RoHS compliant Absolute Maximum Ratings Parameter Drain-source voltage Continuous drain current1) Pulsed drain current2) ( TC = 25°C ) ( TC = 100°C ) Gate-source voltage Avalanche energy, single pulse3) Avalanche energy, repetitive2) Avalanche current, repetitive2) Power dissipation ( TC = 25°C ) Operating and storage temperature r.


WML12N60VD WMM12N60VD WMN12N60VD


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