TOSHIBA Transistor Silicon PNP Triple Diffused Type
2SA1987
Power Amplifier Applications
2SA1987
Unit: mm
• High break...
TOSHIBA
Transistor Silicon
PNP Triple Diffused Type
2SA1987
Power Amplifier Applications
2SA1987
Unit: mm
High breakdown voltage: VCEO = −230 V (min) Complementary to 2SC5359
Recommended for 100-W high-fidelity audio frequency amplifier output stage.
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
V CBO
−230
V
Collector-emitter voltage
V CEO
−230
V
Emitter-base voltage
VEBO −5 V
Collector current
IC −15 A
Base current
IB −1.5 A
Collector power dissipation (Tc = 25°C) Junction temperature Storage temperature range
PC 180 W
Tj 150 °C
T stg
−55 to 150
°C
JEDEC JEITA TOSHIBA
― ― 2-21F1A
Note: Using continuously under heavy loads (e.g. the application of high
Weight: 9.75 g (typ.)
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temper...
