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BSO303PH

Infineon

Small-Signal-Transistor

OptiMOS®-P Small-Signal-Transistor Features • Dual P-Channel in SO8 • Enhancement mode • Logic level • 150°C operating t...


Infineon

BSO303PH

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Description
OptiMOS®-P Small-Signal-Transistor Features Dual P-Channel in SO8 Enhancement mode Logic level 150°C operating temperature Qualified according JEDEC for target applications Halogen-free according to IEC61249-2-21 Pb-free lead plating; RoHS compliant BSO303P H Product Summary VDS RDS(on),max VGS=-10V VGS=-4.5V ID -30 V 21 mW 32 -8.2 A SO 8 Type BSO303P H Package PG-DSO- 8 Marking Lead free Halogen free 303P Yes Yes Packing dry Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current1) Pulsed drain current2) ID I D,pulse T C=25 °C T C=70 °C T C=25 °C Avalanche energy, single pulse E AS I D=-8.2 A, R GS=25 W Gate source voltage Power dissipation Operating and storage temperature V GS P tot T A=25 °C T j, T stg ESD class JESD22-A114 HBM Soldering temperature IEC climatic category; DIN IEC 68-1 Value Unit 10 secs steady state -8,2 -7,0 A -6,6 -5,8 -32,8 97 mJ ±20 2 -55 ....




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