700V N-Channel MOSFET
SLP4N70C / SLF4N70C
SLP4N70C / SLF4N70C
700V N-Channel MOSFET
General Description
This Power MOSFET is produced using M...
Description
SLP4N70C / SLF4N70C
SLP4N70C / SLF4N70C
700V N-Channel MOSFET
General Description
This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction based on half bridge topology.
Features
- 3.5A, 700V, RDS(on)typ. = 3.0Ω@VGS = 10 V - Low gate charge ( typical 14nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability
D
GDS
TO-220
GDS
TO-220F
G S
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
Parameter
SLP4N70C
SLF4N70C
VDSS
ID
IDM VGSS EAS IAR EAR dv/dt
PD
TJ, TSTG
TL
Drain-Source Voltage
Drain Current Drain Current
- Continuous (TC = 25℃) - Continuous (TC = 100℃) - Pulsed
(Note 1)
G...
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