N-Channel MOSFET
SLB/D/F/I/P /U80R600SJ
General Description
This Power MOSFET is producFeeadtuurseisng Maple semi‘s
Advanced Super-Jun...
Description
SLB/D/F/I/P /U80R600SJ
General Description
This Power MOSFET is producFeeadtuurseisng Maple semi‘s
Advanced Super-Junction This advanced technology
theacsh--nbL7oo.e6wlAeo,gng5ay0tee0. Vsch,paRerDgcSe(oi(na)ttylylppy. i=cat0al .5i2lΩo5n@rCeV)dGS
=
10
V
to minimize conduction loss, pr-oHvigihdreugsguedpneesrsior switching performance, and withstand hig-- F1h0a0set%nswaevitracghlaiynngcpheutlessetedin the avalanche and commutation m-oImdpero.ved dv/dt capability
These devices are well suited for AC/DC power conversion
SLD80R600SJ,SLU80R600SJ,SLP80R600SJ SLF80R600SJ, SLB80R600SJ, SLI80R600SJ
800V N-Channel MOSFET
Features
-10A, 800V, RDS(on) typ.= 0.55Ω@VGS = 10 V
- Low gate charge ( typical - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability
35nC)
DD
GDS
TO-220
GDS
TO-220F
GDS
DD
D2-PAK GS
GS
D-PAK
GDS
I2-PAK
I-PAK
G S
Absolute Maximum Ratings
TC = 25°C unless otherwise noted
Symbol
Parameter
D2-PAK/D-PAK I2-PAK / I-...
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