IRFB11N50A

IRFB11N50A, SiHFB11N50A Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 500 VGS = 10 V 52 13 18 Single 0.52 TO-220 D G S D G S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free SnPb FEATURES Low Gate Charge Qg Results in Simple Drive Requirement Improved Gate, Avalanche and Dynamic dV/dt Ruggedness Available RoHS* COMPLIANT Fully Characterized Capacitance and Avalanche Voltage and current Lead (Pb)-free Available APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply High Speed Power Switching APPLICABLE OFF LINE SMPS TOPOLOGIES Two Transistor Forward Half and Full Bridge Power Factor Correction Boost TO-220 IRFB11N50APbF SiHFB11N50A-E3 IRFB11N50A SiHFB11N50A ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER SYMBOL Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current Pulsed Drain Currenta ...