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SLD830S / SLU830S
SLD830S / SLU830S
500V N-Channel MOSFET
General Description
This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction based on half bridge topology.
Features
- 5.0A, 500V, RDS(on)Typ= 1.35Ω@VGS = 10 V - Low gate charge ( typical 26nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability
D
D D-PAK
I-PAK
G
GS
GDS
S
Absolute Maximum Ratings TC = 25 ℃ unless otherwise noted
Symbol
Parameter
SLU830S
SLD830S
VDSS
ID
IDM VGSS EAS
Drain-Source Voltage
Drain Current - Continuous (TC = 25℃)
Drain Current
- Continuous (TC = 100℃) - Pulsed
Gate-Source Voltage
Single Pulsed Avalanche.