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SLF830S Dataheets PDF



Part Number SLF830S
Manufacturers Maple Semiconductor
Logo Maple Semiconductor
Description N-Channel MOSFET
Datasheet SLF830S DatasheetSLF830S Datasheet (PDF)

SLP830S / SLF830S SLP830S / SLF830S 500V N-Channel MOSFET General Description This Power MOSFET is produced using Maple semi ‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction based on half bridge t.

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SLP830S / SLF830S SLP830S / SLF830S 500V N-Channel MOSFET General Description This Power MOSFET is produced using Maple semi ‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction based on half bridge topology. Features - 5.0A, 500V, RDS(on) = 1.35Ω@VGS = 10 V - Low gate charge ( typical 26nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D GD S TO-220F GDS TO-220 G S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current - Continuous (T C = 25℃) - Continuous (T C = 100℃) Drain Current - Pulsed (Note 1) Gate-Source Voltage Sin.


SLP830S SLF830S MS2H30065V1


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