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MS2H40120V1

Maple Semiconductor

Silicon Carbide Diode

MS2H40120V1 MS2H40120V1 1200V Silicon Carbide Diode Features -1200-Volt Schottky Rectifier -Shorter recovery time -Hig...


Maple Semiconductor

MS2H40120V1

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Description
MS2H40120V1 MS2H40120V1 1200V Silicon Carbide Diode Features -1200-Volt Schottky Rectifier -Shorter recovery time -High-speed switching possible -High-Frequency Operation -Temperature-Independent Switching Behavior -Extremely Fast Switching -Positive Temperature Coefficient on VF Applications -Switch Mode Power Supplies -Power Factor Correction -Motor Drives -HID Lighting Benefits -Higher safety margin against overvoltage -Improved efficiency all load conditions -Increased efficiency compared to Silicon Diode alternatives -Reduction of Heat Sink Requirements -Parallel Devices Without Thermal Runaway -Essentialy No Switching Losses Package Type : TO-247-3Lead AC A Absolute Maximum Ratings TC = 25 ℃ unless otherwise noted Symbol Parameter VRRM VRSM VDC IF IFRM IFSM Ptot TJ , Tstg Repetitive Peak Reverse Voltage Surge Peak Reverse Voltage DC Blocking Voltage Continuous Forward Current @Tc=25℃ (Per Leg/Device) @Tc=135℃ @Tc=149℃ Repetitive Peak Forward Surge Current ...




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