STHI07N50 STHI07N50FI
HIGH INJECTION N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS (IGBT)
PRELIMINARY OATA
TYPE
ST...
STHI07N50 STHI07N50FI
HIGH INJECTION N-CHANNEL ENHANCEMENT MODE POWER MOS
TRANSISTORS (IGBT)
PRELIMINARY OATA
TYPE
STHI07N50 STHI07N50FI
Voss
500 V 500 V
10
7A 7A
HIGH INPUT IMPEDANCE LOW ON-VOLTAGE HIGH CURRENT CAPABILITY
APPLICATIONS: AUTOMOTIVE IGNITION DRIVERS FOR SOLENOIDS AND RELAYS
N - channel High Injection POWER MOS
transistors (lGBT) which features a high impedance insulated gate input and a low on-resistance characteristic of bipolar
transistors. This low resistance is achieved by conductivity modulation of the drain. These devices are particularly suited to automative ignition switching. They can also be used as drivers for solenoids and relays.
TO-220
ISOWATT220
INTERNAL SCHEMATIC DIAGRAM
0
s
ABSOLUTE MAXIMUM RATINGS
Vos Drain-source voltage (VGS =0)
VGS Gate-source voltage
10 (-) Drain current (contin.) at Tc =25°C
10M Drain current (pulsed)
Total dissipation at Tc <25°C Derating factor Storage temperature Max. operating junction temperat...