HIGH INJECTION N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
Description
STHI07N50 STHI07N50FI
HIGH INJECTION N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS (IGBT)
PRELIMINARY OATA
TYPE
STHI07N50 STHI07N50FI
Voss
500 V 500 V
10
7A 7A
HIGH INPUT IMPEDANCE LOW ON-VOLTAGE HIGH CURRENT CAPABILITY
APPLICATIONS: AUTOMOTIVE IGNITION DRIVERS FOR SOLENOIDS AND RELAYS
N - channel High Injection POWER MOS transistors (lGBT...
