SGSP301

rrj * 7 W -» SGS-THOMSON RjflDeMlILligirmOD^i SGSP301 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE SGSP301 V DSS 100 V R DS(on) 1.4 Q *D 2.0 A HIGH SPEED SWITCHING APPLICATIONS GENERAL PURPOSE APPLICATIONS ULTRA FAST SWITCHING EASY DRIVE FOR REDUCED COST AND SIZE INDUSTRIAL APPLICATIONS: GENERAL PURPOSE SWITCHING N - channel enhancement mode POWER MOS field effect transistor. Easy drive and very fast switching times make this POWER MOS transistor ideal for high speed switching applications. Typical appli­ cations include general purpose low voltage swit­ ching, solenoid driving, motor and lamp control, switching power supplies, and driving, bipolar po­ wer switching transistors. TO-220 INTERNAL SCHEMATIC DIAGRAM CO o > ABSOLUTE MAXIMUM RATINGS Vdgr VGS *D d ■d m n ■d l m ( * ) Ptot "■"stg Ti Drain-source voltage (VGS= 0) Drain-gate voltage (RGS= 20 KQ) Gate-source voltage Drain current (cont.) at Tc = 25°C Drain current (cont.) a...