SGSP341

/ T 7 SCS-THOMSON [*03(m i(graKi(gS SGSP341 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE SGSP341 V DSS 400 V ^DS(on) 20 n b 0.6 A HIGH SPEED SWITCHING APPLICATIONS ULTRA FAST SWITCHING EASY DRIVE FOR REDUCED COST AND SIZE INDUSTRIAL APPLICATIONS: GENERAL PURPOSE N - channel enhancement mode POWER MOS field effect transistor. Easy drive and very fast switch­ ing times make this POWER MOS transistor ideal for high speed switching applications. Typical ap­ plications include motor starter and drive circuits for power bipolar transistors. TO-220 INTERNAL SCHEMATIC DIAGRAM ° GO- S ABSOLUTE MAXIMUM RATINGS V DS V dgr V GS b b *dm (*) dlm O Plot T tg Ti Drain-source voltage (VGS= 0) Drain-gate voltage (RGS= 20 KQ) Gate-source voltage Drain current (cont.) at Tc = 25°C Drain current (cont.) at Tc = 100°C Drain current (pulsed) Drain inductive current, clamped Total dissipation at Tc < 2 5 °C Derating factor Storage temperature Max. operating jun...