SGSP317

~~'YL S~DG©OSO©-~1[H]JO~©MuOOS©O~DN©~ SGSP316 SGSP317 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE SGSP316 SGSP317 Voss 250 V 200 V ROS(on) 1.20 0.750 10 5A 6A HIGH SPEED SWITCHING APPLICATIONS ULTRA FAST SWITCHING RATED FOR UNCLAMPED INDUCTIVE SWITCHING (ENERGY TEST) EASY DRIVE - REDUCED COST AND SIZE INDUSTRIAL APPLICATIONS: SWITCHING POWER SUPPLIES DC SWITCH N - channel enhancement mode POWER MaS field effect transistors. Easy drive and very fast switching times make these POWER MaS transistors ideal for high speed switching applications. Typical uses are in telecommunications, switching power supplies and as a DC switch. TO-220 INTERNAL SCHEMATIC DIAGRAM 5 ABSOLUTE MAXIMUM RATINGS Drain-source voltage (VGS = 0) Drain-gate voltage (RGS =20 KO) Gate-source voltage Drain current (cant.) at Tc =25°C Drain current (cant.) at Tc = 100°C Drain current (pulsed) Total dissipation at Tc <25°C Derating factor Tstg Storage temperature Tj...