SGSP319

SGSP319 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE SGSP319 Voss 500 V ROS(on) 3.8 0 10 2.8 A HIGH SPEED SWITCHING APPLICATIONS 500V - HIGH VOLTAGE FOR SMPS ULTRA FAST SWITCHING EASY DRIVE FOR REDUCED COST AND SIZE INDUSTRIAL APPLICATIONS: SWITCHING POWER SUPPLIES N - channel enhancement mode POWER MaS field effect transistor. Easy drive and very fast switching times make this POWER MaS transistor ideal for high speed switching applications. Typical applications include switching power supplies, battery chargers, motor speed control and solenoid drivers. TO-220 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Drain-source voltage (VGS = 0) Drain-gate voltage (RGS = 20 KO) Gate-source voltage Drain current (cont.) at Tc = 25°C Drain current (cont.) at Tc= 100°C Dr~in current (pulsed) Drain inductive current, clamped Total dissipation at Tc <25°C Derating factor Tstg Storage temperature Tj Max. operating junction temperature (e) Pulse width lim...