SGSP362

SGSP361 SGSP362 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE SGSP361 SGSP362 Voss 100 V 80 V Ros(on) 0.150 0.1 0 10 18 A 22 A HIGH SPEED SWITCHING APPLICATIONS 80 - 100 VOLTS - FOR UPS APPLICATIONS ULTRA FAST SWITCHING RATED FOR UNCLAMPED INDUCTIVE SWITCHING (ENERGY TEST) EASY DRIVE FOR REDUCED SIZE AND COST INDUSTRIAL APPLICATIONS: UNINTERRUPTIBLE POWER SUPPLIES MOTOR CONTROLS N - channel enhancement mode POWER MOS field effect transistor. Easy drive and very fast switching times make this POWER MOS transistor ideal for high speed switching applications. Typical applications include UPS, battery chargers, printer hammer drivers, solenoid drivers and motor control. , INTERNAL SCHEMATIC DIAGRAM 5 ABSOLUTE MAXIMUM RATINGS VOS VOGR VGS 10 10 ION! (e) Ptot Tstg Tj Drain-source voltage (VGs=O) Drain-gate voltage (RGS = 20 KO) Gate-source voltage Drain current (cont.) at Tc =25°C Drain current (cont.) at Tc = 100°C Drain current (pulsed)...