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SGSP579
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
TYPE SGSP579
Voss 500 V
ROS(on) 0.7 Q
10 9A
• HIGH SPEED SWITCHING APPLICATIONS • HIGH VOLTAGE - 9A FOR UP TO 350W SMPS • ULTRA FAST SWITCHING - FOR OPERATION
AT> 100KHz • EASY DRIVE - REDUCED COST AND SIZE
INDUSTRIAL APPLICATIONS: • SWITCHING MODE POWER SUPPLIES • MOTOR CONTROLS
N - channel enhancement mode POWER MOS field effect transistor. Easy drive and very fast switching times make this POWER MOS transistor ideal for high speed switching applications. Typical applications include switching mode power supplies, uninterruptible power supplies and motor speed control.
TO-3
INTERNAL SCHEMATIC DIAGRAM
5
ABSOLUTE MAXIMUM RATINGS
VOGR VGS 10
Tstg Tj
Drain-source voltage (VGS =0) Drain-gate voltage (RGS =20 KQ)
Gate-source voltage
Drain current (cont.) at Tc =25°C Drain current (cont.) at Tc = 100°C
Drain current (pulsed) Drain inductive current, clamped Total dissipation at Tc <25°C Derating factor Storag.