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SGSP579 Dataheets PDF



Part Number SGSP579
Manufacturers STMicroelectronics
Logo STMicroelectronics
Description N-CHANNEL POWER MOS TRANSISTORS
Datasheet SGSP579 DatasheetSGSP579 Datasheet (PDF)

SGSP579 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE SGSP579 Voss 500 V ROS(on) 0.7 Q 10 9A • HIGH SPEED SWITCHING APPLICATIONS • HIGH VOLTAGE - 9A FOR UP TO 350W SMPS • ULTRA FAST SWITCHING - FOR OPERATION AT> 100KHz • EASY DRIVE - REDUCED COST AND SIZE INDUSTRIAL APPLICATIONS: • SWITCHING MODE POWER SUPPLIES • MOTOR CONTROLS N - channel enhancement mode POWER MOS field effect transistor. Easy drive and very fast switching times make this POWER MOS transistor ideal for high speed.

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SGSP579 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE SGSP579 Voss 500 V ROS(on) 0.7 Q 10 9A • HIGH SPEED SWITCHING APPLICATIONS • HIGH VOLTAGE - 9A FOR UP TO 350W SMPS • ULTRA FAST SWITCHING - FOR OPERATION AT> 100KHz • EASY DRIVE - REDUCED COST AND SIZE INDUSTRIAL APPLICATIONS: • SWITCHING MODE POWER SUPPLIES • MOTOR CONTROLS N - channel enhancement mode POWER MOS field effect transistor. Easy drive and very fast switching times make this POWER MOS transistor ideal for high speed switching applications. Typical applications include switching mode power supplies, uninterruptible power supplies and motor speed control. TO-3 INTERNAL SCHEMATIC DIAGRAM 5 ABSOLUTE MAXIMUM RATINGS VOGR VGS 10 Tstg Tj Drain-source voltage (VGS =0) Drain-gate voltage (RGS =20 KQ) Gate-source voltage Drain current (cont.) at Tc =25°C Drain current (cont.) at Tc = 100°C Drain current (pulsed) Drain inductive current, clamped Total dissipation at Tc <25°C Derating factor Storag.


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