256Mb SYNCHRONOUS DRAM
IS42S83200G, IS42S16160G IS45S83200G, IS45S16160G
32Meg x 8, 16Meg x16 DECEMBER 2013 256Mb SYNCHRONOUS DRAM
FEATURES
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Description
IS42S83200G, IS42S16160G IS45S83200G, IS45S16160G
32Meg x 8, 16Meg x16 DECEMBER 2013 256Mb SYNCHRONOUS DRAM
FEATURES
Clock frequency: 200,166, 143 MHz
Fully synchronous; all signals referenced to a positive clock edge
Internal bank for hiding row access/precharge
Single Power supply: 3.3V + 0.3V
LVTTL interface
Programmable burst length – (1, 2, 4, 8, full page)
Programmable burst sequence: Sequential/Interleave
Auto Refresh (CBR)
Self Refresh
8K refresh cycles every 32 ms (A2 grade) or 64 ms (commercial, industrial, A1 grade)
Random column address every clock cycle
Programmable CAS latency (2, 3 clocks)
Burst read/write and burst read/single write operations capability
Burst termination by burst stop and precharge command
OPTIONS
Package: 54-pin TSOP-II 54-ball BGA
Operating Temperature Range: Commercial (0oC to +70oC) Industrial (-40oC to +85oC) Automotive Grade A1 (-40oC to +85oC) Automotive Grade A...
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