SI2310
20V N-Channel Enhancement Mode MOSFET
VDS= 20V RDS(ON),
[email protected],
[email protected] < 28mΩ RDS(ON) Vgs@2 5V, Ids@4 5A < 35mΩ
Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance
Package Dimensions
D
SOT-23
GS
REF.
A B C D E
F
Millimeter Min. Max. 2.80 3.00 2.30 2.50 1.20 1.40 0.30 0.50
0 0.10
0.45 0.55
REF.
G H K J L
M
Millimeter
Min. Max. 1.80 2.00 0.90 1.1 0.10 0.20 0.35 0.70 0.92 0.98
0° 10°
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
ID
Drain Current-Pulsed (Note 1)
IDM
Maximum Power Dissipation
PD
Operating Junction and Storage Temperature Range
TJ,TSTG
Thermal Resistance,Junction-to-Ambient (Note 2)
RθJA
Limit
20 ±10 5.0 13.5 1.25 -55 To 150 100
Unit
V V A A W ℃ ℃/W
- 1 - 2012-7-8
SI2310
Electrical Characteristics (TA=25℃unless otherwise noted)
Parameter
Symbol
Condition
Off Characteristi...
