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IRFP150

Harris

N-Channel Power MOSFETs

Semiconductor July 1998 IRFP150, IRFP151, IRFP152, IRFP153 34A and 40A, 60V and 100V, 0.055 and 0.08 Ohm, N-Channel Pow...


Harris

IRFP150

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Description
Semiconductor July 1998 IRFP150, IRFP151, IRFP152, IRFP153 34A and 40A, 60V and 100V, 0.055 and 0.08 Ohm, N-Channel Power MOSFETs Features 34A and 40A, 60V and 100V rDS(ON) = 0.055Ω and 0.08Ω Single Pulse Avalanche Energy Rated SOA is Power Dissipation Limited Nanosecond Switching Speeds Linear Transfer Characteristics High Input Impedance Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Ordering Information PART NUMBER PACKAGE BRAND IRFP150 TO-247 IRFP150 IRFP151 TO-247 IRFP151 IRFP152 TO-247 IRFP152 IRFP153 TO-247 IRFP153 NOTE: When ordering, include the entire part number. Description These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as s...




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