Semiconductor
July 1998
IRFP150, IRFP151, IRFP152, IRFP153
34A and 40A, 60V and 100V, 0.055 and 0.08 Ohm, N-Channel Pow...
Semiconductor
July 1998
IRFP150, IRFP151, IRFP152, IRFP153
34A and 40A, 60V and 100V, 0.055 and 0.08 Ohm, N-Channel Power MOSFETs
Features
34A and 40A, 60V and 100V rDS(ON) = 0.055Ω and 0.08Ω Single Pulse Avalanche Energy Rated SOA is Power Dissipation Limited Nanosecond Switching Speeds Linear Transfer Characteristics High Input Impedance Related Literature
- TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”
Ordering Information
PART NUMBER
PACKAGE
BRAND
IRFP150
TO-247
IRFP150
IRFP151
TO-247
IRFP151
IRFP152
TO-247
IRFP152
IRFP153
TO-247
IRFP153
NOTE: When ordering, include the entire part number.
Description
These are N-Channel enhancement mode silicon gate power field effect
transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as s...