IRFZ20

IRFZ20/FI IRFZ22/FI N - CHANNEL ENHANCEMENT MODE POWER MaS TRANSISTORS TYPE IRFZ20 IRFZ20FI IRFZ22 IRFZ20FI Voss 50 V 50 V 50 V 50 V ROs(on) 0.1 n 0.1 n 0.12 n 0.12 n 10 15 A 12.5 A 14 A 12 A N-CHANNEL POWER MOS TRANSISTORS VERY LOW Ros (on) LOW DRIVE ENERGY FOR EASY DRIVE COST EFFECTIVE INDUSTRIAL APPLICATIONS: e AUTOMOTIVE POWER ACTUATORS e MOTOR CONTROLS e INVERTERS N - channel enhancement mode POWER MOS field effect transistors. Easy drive and very fast switching times make these POWER MOS transistors ideal for high speed switching circuits applications such as power actuators driving, motor drive including brushless motors, hydraulic actuator and many other in automotive and automatic guided vehicle applications. They also find use DC/DC converters and uninterruptible power supplies TO-220 ISOWATT220 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Vos * VOGR * VGS 10M (e) 10LM Drain-source voltage (VGS =0) Drain-gate voltage (RGS =20 Kn) Gate-source ...