SGSP201

~r~=-l=. S~DG©OSO@-~1[HL~O©lMJOOS@O~DN©~ SGSP201 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE SGSP201 Voss 100 V ROS(on) 1.4 (2 10 2.0 A HIGH SPEED SWITCHING APPLICATIONS ULTRA FAST SWITCHING EASY DRIVE FOR REDUCED COST AND SIZE INDUSTRIAL APPLICATIONS: GENERAL PURPOSE SWITCHING N - channel enhancement mode POWER MOS field effect transistor. Easy drive and very fast switching times make this POWER MOS transistor ideal for high speed switching applications. Typical applications include general purpose low voltage switching, solenoid driving, motor and lamp control, switching power supplies, and driving, bipolar power switching transistors. SOT-82 OPTION SOT-194 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS VOS Drain-source voltage (VGS = 0) Drain-gate voltage (RGS =20 K(2) Gate-source voltage Drain current (cont.) at Tc=25°C Drain current (cont.) at Tc = 100°C Drain current (pulsed) Drain inductive current, clamped Total dissipation at Tc ...