BUZ11 BUZ11 FI
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
TYPE
BUZ11 BUZ11 FI
Voss
50 V 50 V
RoS(on)
0.040 0....
BUZ11 BUZ11 FI
N - CHANNEL ENHANCEMENT MODE POWER MOS
TRANSISTORS
TYPE
BUZ11 BUZ11 FI
Voss
50 V 50 V
RoS(on)
0.040 0.040
10 -
30 A 20 A
HIGH SPEED SWITCHING VERY LOW ON-LOSSES LOW DRIVE ENERGY FOR EASY DRIVE HIGH TRANSCONDUCTANCE/Crss RATIO
INDUSTRIAL APPLICATIONS: AUTOMATIVE POWER ACTUATORS
N - channel enhancement mode POWER MOS field effect
transistors. Easy drive and very fast switching times make these POWER MOS
transistors ideal for high speed switching circuits in applications such as power actuator driving, motor drive including brushless motors, hydraulic actuators and many other uses in automotive applications. They also find use in DC/DC converters and uninterruptible power supplies.
TO-220
ISOWATT 220
INTERNAL SCHEMATIC DIAGRAM
5
ABSOLUTE MAXIMUM RATINGS
Vos VOGR VGS
10M
Drain-source voltage (VGS =0) Drain-gate voltage (RGS =20 KO)
Gate-source voltage
Drain current (pulsed) Tc =25°C
10 -
Ptot Tstg Tj
Drain current (continuous) Tc =30°C
Tot...