BUZ11S2 BUZ11S2FI
N - CHANNEL ENHANCEMENT MODE
POWER MOS TRANSISTORS
TYPE
BUZ11S2 BUZ11S2FI
Voss
60 V 60 V
ROS(on)
0....
BUZ11S2 BUZ11S2FI
N - CHANNEL ENHANCEMENT MODE
POWER MOS
TRANSISTORS
TYPE
BUZ11S2 BUZ11S2FI
Voss
60 V 60 V
ROS(on)
0.04 {1 0.04 {1
10 -
30 A 20 A
VERY LOW ON-LOSSES LOW DRIVE ENERGY FOR EASY DRIVE HIGH TRANSCONDUCTANCE/Crss RATIO
INDUSTRIAL APPLICATIONS: AUTOMATIVE POWER ACTUATORS
N - channel enhancement mode POWER MaS field effect
transistors. Easy drive and very fast switching times make these POWER MaS
transistors ideal for high speed switching circuits in applications such as power actuator driving, motor drive including brushless motors, hydraulic actuators and many other uses in automotive applications. They also find use in DCIDC converters and uninterruptible power supplies.
TO-220
ISOWATT 220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
VOS VOGR VGS
10M
Drain-source voltage (VGS = 0) Drain-gate voltage (RGS = 20 K{1) Gate-source voltage Drain current (pulsed) Tc=25°C
10 -
Ptot Tst9 Tj
Drain current (continuous) Tc = 30°C Total dissipation ...