BUZ25

BUZ25 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE BUZ25 Voss 100 V Ros(on) 0.1 0 10 19 A 100 VOLTS - FOR DCIDC CONVERTERS HIGH CURRENT RATED FOR UNCLAMPED INDUCTIVE SWITCHING (ENERGY TEST) ULTRA FAST SWITCHING EASY DRIVE - FOR REDUCED COST AND SIZE INDUSTRIAL APPLICATIONS: UNINTERRUPTIBLE POWER SUPPLIES MOTOR CONTROLS N - channel enhancement mode POWER MOS field effect transistor. Easy drive and very fast switching times make this POWER MOS transistor ideal for high speed switching applications. Typical applications include DCIDC converters, UPS, battery chargers, secondary regulators, servo control, power audio amplifiers and robotics. TO-3 INTERNAL SCHEMATIC DIAGRAM 5 ABSOLUTE MAXIMUM RATINGS Vos VOGR VGS 10 10M Ptot Tstg Tj Drain-source voltage (VGS =0) Drain-gate voltage (RGS =20 KO) Gate-source voltage Drain current (continuous) Tc =35°C Drain current (pulsed) Total dissipation at Tc < 25°C Storage temperature Max. operating j...