BUZ60
N - CHANNEL ENHANCEMENT MODE
POWER MOS TRANSISTOR
TYPE BUZ60
Voss 400 V
Ros(on) 1.00
10 5.5 A
• HIGH VOLTAGE ...
BUZ60
N - CHANNEL ENHANCEMENT MODE
POWER MOS
TRANSISTOR
TYPE BUZ60
Voss 400 V
Ros(on) 1.00
10 5.5 A
HIGH VOLTAGE - FOR OFF-LINE APPLICATIONS
ULTRA FAST SWITCHING EASY DRIVE - FOR REDUCED COST AND
SIZE
INDUSTRIAL APPLICATIONS: ELECTRONIC LAMP BALLAST DC SWITCH
N - channel enhancement mode POWER MOS field effect
transistor. Easy drive and very fast switching times make this POWER MOS
transistor ideal for high speed switching applications. Applications include DC switch, constant current source, ultrasonic equipment and electronic ballast for fluorescent lamps.
,
TO-220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Vos VOGR VGS
10
10M
Ptot Tstg Tj
Drain-source voltage (VGS =0) Drain-gate voltage (RGS =20 KO)
Gate-source voltage
Drain current (continuous) Tc =35°C
Drain current (pulsed) Total dissipation at Tc <25°C Storage temperature Max. operating junction temperature DIN humidity category (DIN 40040) IEC climatic category (DIN IEC 68-1)
June 1988
...
