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BUZ60B Dataheets PDF



Part Number BUZ60B
Manufacturers STMicroelectronics
Logo STMicroelectronics
Description N-Channel MOSFET
Datasheet BUZ60B DatasheetBUZ60B Datasheet (PDF)

BUZ60B N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE BUZ60B Voss 400 V Ros(on) 1.5 n 10 4.5 A • HIGH VOLTAGE - FOR OFF-LINE APPLICATIONS • ULTRA FAST SWITCHING • EASY DRIVE - FOR REDUCED COST AND SIZE INDUSTRIAL APPLICATIONS: • ELECTRONIC LAMP BALLAST • DC SWITCH N - channel enhancement mode POWER MOS field effect transistor. Easy drive and very fast switching times make this POWER MOS transistor ideal for high speed switching applications. Applications include DC switch, constant .

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BUZ60B N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE BUZ60B Voss 400 V Ros(on) 1.5 n 10 4.5 A • HIGH VOLTAGE - FOR OFF-LINE APPLICATIONS • ULTRA FAST SWITCHING • EASY DRIVE - FOR REDUCED COST AND SIZE INDUSTRIAL APPLICATIONS: • ELECTRONIC LAMP BALLAST • DC SWITCH N - channel enhancement mode POWER MOS field effect transistor. Easy drive and very fast switching times make this POWER MOS transistor ideal for high speed switching applications. Applications include DC switch, constant current source, ultrasonic equipment and electronic ballast for fluorescent lamps. TO-220 INTERNAL SCHEMATIC DIAGRAM 5 ABSOLUTE MAXIMUM RATINGS Vos VOGR VGS 10 10M Ptot Tstg Tj Drai n-source voltage (VGS =0) Drain-gate voltage (RGS =20 Kn) Gate-source voltage Drain current (continuous) Tc =25°C Drain current (pulsed) Total dissipation at Tc <25°C Storage temperature Max. operating junction temperature DIN humidity category (DIN 40040) IEC climatic category (DIN IEC 68-1) June 1.


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