BUZ76

BUZ76 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE BUZ76 Voss 400 V RoS(on) 1.80 10 3A HIGH VOLTAGE - FOR OFF-LINE APPLICATIONS ULTRA FAST SWITCHING EASY DRIVE - FOR REDUCED COST AND SIZE INDUSTRIAL APPLICATIONS: ELECTRONIC LAMP BALLAST DC SWITCH N - channel enhancement mode POWER MaS field effect transistor. Easy drive and very fast switching times make this POWER MaS transistor ideal for high speed switching applications. Applications include off-line use, constant current source, ultrasonic equipment and switching power supply start-up circuits. , TO-220 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Vos VOGR VGS 10 10M Ptot Tstg Tj Drain-source voltage (VGS =0) Drain-gate voltage (RGS =20 KO) Gate-source voltage Drain current (continuous) Tc =35°C Drain current (pulsed) Total dissipation at Tc <25°C Storage temperature Max. operating junction temperature DIN humidity category (DIN 40040) IEC climatic category (DIN IEC 68-1) June 1988 ...