IRF621FI

IRF 620/FI-621/FI IRF 622/FI-623/FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE IRF620 IRF620FI IRF621 IRF621FI IRF622 IRF622FI IRF623 IRF623FI Voss 200 V 200 V 150 V 150 V 200 V 200 V 150 V 150 V Ros(on) 0.8 0 0.8 0 0.80 0.8 0 1.2 0 1.2 0 1.2 0 1.2 0 10 5A 4A 5A 4A 4A 3.5 A 4A 3.5 A e 200V FOR TELECOMMUNICATION APPLICATIONS e ULTRA FAST SWITCHING e RATED FOR UNCLAMPED INDUCTIVE SWITCHING (ENERGY TEST) e EASY DRIVE - REDUCES COST AND SIZE TO-220 ISOWATT220 INDUSTRIAL APPLICATIONS: e SWITCHING MODE POWER SUPPLIES e DC SWITCH e ROBOTCS N-channel enhancement mode POWER MaS field effect transistors. Easy drive and very fast switching times make these POWER MaS transistors ideal for high speed switching applications. Typical uses are in telecommunications, robotics, switching power supplies and as a DC switch. G~INTERNAL SCHEMATIC DIAGRAM 5 ABSOLUTE MAXIMUM RATINGS TO-220 ISOWATT220 IRF 620 621 622 620FI 621FI 622FI 623 623FI VOS * VOGR * VGS 10M (e) Drain...