Document
IRF 620/FI-621/FI IRF 622/FI-623/FI
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
TYPE
IRF620 IRF620FI
IRF621 IRF621FI
IRF622 IRF622FI
IRF623 IRF623FI
Voss
200 V 200 V
150 V 150 V
200 V 200 V
150 V 150 V
Ros(on)
0.8 0 0.8 0
0.80 0.8 0
1.2 0 1.2 0
1.2 0 1.2 0
10 • 5A 4A
5A 4A
4A 3.5 A
4A 3.5 A
e 200V FOR TELECOMMUNICATION APPLICATIONS
e ULTRA FAST SWITCHING
e RATED FOR UNCLAMPED INDUCTIVE SWITCHING (ENERGY TEST) •
e EASY DRIVE - REDUCES COST AND SIZE
TO-220
ISOWATT220
INDUSTRIAL APPLICATIONS:
e SWITCHING MODE POWER SUPPLIES
e DC SWITCH
e ROBOTCS
N-channel enhancement mode POWER MaS field effect transistors. Easy drive and very fast switching times make these POWER MaS transistors ideal for high speed switching applications. Typical uses are in telecommunications, robotics, switching power supplies and as a DC switch.
G~INTERNAL SCHEMATIC
DIAGRAM
5
ABSOLUTE MAXIMUM RATINGS
TO-220 ISOWATT220
IRF 620 621 622 620FI 621FI 622FI
623 623FI
VOS *
VOGR *
VGS 10M (e)
Drain.