P-Channel MOSFET
FETek Technology Corp.
Green Device Available Super Low Gate Charge Excellent CdV/dt effect decline Advanced hig...
Description
FETek Technology Corp.
Green Device Available Super Low Gate Charge Excellent CdV/dt effect decline Advanced high cell density Trench
technology
FKN3601
P-Ch 30V Fast Switching MOSFETs
Product Summary
BVDSS -30V
RDSON 55mΩ
ID -4.3A
Description
The FKN3601 is the high cell density trenched P-ch MOSFETs, which provides excellent RDSON and efficiency for most of the small power switching and load switch applications. The FKN3601 meet the RoHS and Green Product requirement with full function reliability approved.
SOT 23 Pin Configurations
Absolute Maximum Ratings
Symbol
VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ PD@TA=70℃ TSTG TJ
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current2 Total Power Dissipation3 Total Power Dissipation3 Storage Temperature Range Operating Junction Temperature Range
Thermal Data
Symbol RθJA RθJA
Parameter
Thermal Resistance Junction-Ambient 1 Thermal Resist...
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