FKN2611

FETek Technology Corp.  Super Low Gate Charge  Green Device Available  Excellent CdV/dt effect decline  Advanced high cell density Trench technology FKN2611 P-Ch 20V Fast Switching MOSFETs Product Summary BVDSS -20V RDSON 45mΩ ID -4.9A Description SOT 23 Pin Configurations The FKN2611 is the high cell density trenched P-ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications. The FKN2611 meet the RoHS and Green Product requirement with full function reliability approved. Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ PD@TA=70℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ -4.5V1 Continuous Drain Current, VGS @ -4.5V1 Pulsed Drain Current2 Total Power Dissipation3 Total Power Dissipation3 Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol RθJA RθJA Parameter Thermal Resistance Junction-Ambient...